STB30NF10 Todos los transistores

 

STB30NF10 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STB30NF10
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 115 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 100 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 20 V
   |Id|ⓘ - Corriente continua de drenaje: 35 A
   Tjⓘ - Temperatura máxima de unión: 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 40 nS
   Cossⓘ - Capacitancia de salida: 180 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm
   Paquete / Cubierta: D2PAK

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STB30NF10 Datasheet (PDF)

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stb30nf10.pdf

STB30NF10 STB30NF10

STB30NF10STP30NF10 STP30NF10FPN-CHANNEL 100V - 0.038 - 35A TO-220/TO-220FP/D2PAKLOW GATE CHARGE STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB30NF10 100 V

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stb30nf10 stp30nf10 stp30nf10fp.pdf

STB30NF10 STB30NF10

STB30NF10STP30NF10 - STP30NF10FPN-channel 100V - 0.038 - 35A - D2PAK/TO-220/TO-220FPLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB30NF10 100V

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stb30nf10t4 stb30nf10 stp30nf10 stp30nf10fp.pdf

STB30NF10 STB30NF10

STB30NF10STP30NF10 - STP30NF10FPN-channel 100V - 0.038 - 35A - D2PAK/TO-220/TO-220FPLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB30NF10 100V

 7.1. Size:386K  st
stp30nf20 stb30nf20 stw30nf20.pdf

STB30NF10 STB30NF10

STP30NF20 - STB30NF20STW30NF20N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAKLow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PTOTSTP30NF20 200V 0.075 30A 125WSTW30NF20 200V 0.075 30A 125W3322STB30NF20 200V 0.075 30A 125W11TO-2473 Gate charge minimized TO-2201 100% avalanche testedDPAK Excellent figure of me

 7.2. Size:847K  st
stb30nf20l.pdf

STB30NF10 STB30NF10

STB30NF20LN-channel 200 V, 0.065 , 30 A STripFET Power MOSFET in D2PAK packageDatasheet production dataFeaturesOrder code VDSS RDS(on) ID PTOTSTB30NF20L 200 V 0.075 30 A 150 WTAB Gate charge minimized 100% avalanche tested3 Excellent figure of merit (RDS* Qg)1 Very good manufacturing repeatabilityDPAK Very low intrinsic capacitanceApp

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stp30nf20 stw30nf20 stb30nf20.pdf

STB30NF10 STB30NF10

STP30NF20 - STB30NF20STW30NF20N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAKLow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PTOTSTP30NF20 200V 0.075 30A 125WSTW30NF20 200V 0.075 30A 125W3322STB30NF20 200V 0.075 30A 125W11TO-2473 Gate charge minimized TO-2201 100% avalanche testedDPAK Excellent figure of me

 7.4. Size:355K  inchange semiconductor
stb30nf20.pdf

STB30NF10 STB30NF10

isc N-Channel MOSFET Transistor STB30NF20FEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 75m(Max) @ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

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