STB30NF10 Datasheet and Replacement
Type Designator: STB30NF10
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 115 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 35 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 40 nS
Cossⓘ - Output Capacitance: 180 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.045 Ohm
Package: D2PAK
STB30NF10 substitution
STB30NF10 Datasheet (PDF)
stb30nf10.pdf

STB30NF10STP30NF10 STP30NF10FPN-CHANNEL 100V - 0.038 - 35A TO-220/TO-220FP/D2PAKLOW GATE CHARGE STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTB30NF10 100 V
stb30nf10 stp30nf10 stp30nf10fp.pdf

STB30NF10STP30NF10 - STP30NF10FPN-channel 100V - 0.038 - 35A - D2PAK/TO-220/TO-220FPLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB30NF10 100V
stb30nf10t4 stb30nf10 stp30nf10 stp30nf10fp.pdf

STB30NF10STP30NF10 - STP30NF10FPN-channel 100V - 0.038 - 35A - D2PAK/TO-220/TO-220FPLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTB30NF10 100V
stp30nf20 stb30nf20 stw30nf20.pdf

STP30NF20 - STB30NF20STW30NF20N-channel 200V - 0.065 - 30A - TO-220/TO-247/D2PAKLow gate charge STripFET Power MOSFETFeaturesType VDSS RDS(on) ID PTOTSTP30NF20 200V 0.075 30A 125WSTW30NF20 200V 0.075 30A 125W3322STB30NF20 200V 0.075 30A 125W11TO-2473 Gate charge minimized TO-2201 100% avalanche testedDPAK Excellent figure of me
Datasheet: STB24NM65N , STB25NM50N , STB25NM60ND , STB26NM60N , STB270N4F3 , STB28NM50N , STB300NH02L , STB30N65M5 , MMD60R360PRH , STB30NF20 , STB30NM50N , STB30NM60ND , STB32N65M5 , STB34NM60ND , STB35N65M5 , STB35NF10 , STB36NF06L .
History: SSF90R260S | SSF7NS70UGX | IPI65R380C6 | SI6562CDQ | KMB6D6N30Q | NP16N06YLL | SFG110N12PF
Keywords - STB30NF10 MOSFET datasheet
STB30NF10 cross reference
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STB30NF10 replacement
History: SSF90R260S | SSF7NS70UGX | IPI65R380C6 | SI6562CDQ | KMB6D6N30Q | NP16N06YLL | SFG110N12PF



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