STB7NK80Z-1 Todos los transistores

 

STB7NK80Z-1 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STB7NK80Z-1

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 125 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 5.2 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4.5 V

Carga de compuerta (Qg): 40 nC

Resistencia drenaje-fuente RDS(on): 1.8 Ohm

Empaquetado / Estuche: I2PAK

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STB7NK80Z-1 Datasheet (PDF)

1.1. stb7nk80zt4.pdf Size:937K _upd

STB7NK80Z-1
STB7NK80Z-1

STB7NK80Z, STB7NK80Z-1 STP7NK80ZFP, STP7NK80Z N-channel 800 V, 1.5 Ω, 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK Zener-protected SuperMESH™ Power MOSFET Features VDSS Type RDS(on) ID (@Tjmax) STP7NK80Z 800V < 1.8Ω 5.2A 3 2 1 STP7NK80ZFP 800V < 1.8Ω 5.2A TO-220 TO-220FP STB7NK80Z 800V < 1.8Ω 5.2A STB7NK80Z-1 800V < 1.8Ω 5.2A ■ Extremely high dv/dt capability ■ 100% aval

1.2. stb7nk80z stb7nk80z-1 stp7nk80zfp stp7nk80z.pdf Size:937K _st

STB7NK80Z-1
STB7NK80Z-1

STB7NK80Z, STB7NK80Z-1 STP7NK80ZFP, STP7NK80Z N-channel 800 V, 1.5 ?, 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK Zener-protected SuperMESH Power MOSFET Features VDSS Type RDS(on) ID (@Tjmax) STP7NK80Z 800V < 1.8? 5.2A 3 2 1 STP7NK80ZFP 800V < 1.8? 5.2A TO-220 TO-220FP STB7NK80Z 800V < 1.8? 5.2A STB7NK80Z-1 800V < 1.8? 5.2A Extremely high dv/dt capability 100% avalanche tested 3 3

 5.1. stb7n52k3 std7n52k3 stf7n52k3 stp7n52k3.pdf Size:1194K _st

STB7NK80Z-1
STB7NK80Z-1

STB7N52K3, STD7N52K3 STF7N52K3, STP7N52K3 N-channel 525 V, 0.84 ?, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET Features RDS(on) Type VDSS ID Pw max 3 3 1 1 STB7N52K3 525 V < 0.98 ? 6.2 A 90 W DPAK D?PAK STD7N52K3 525 V < 0.98 ? 6.2 A 90 W STF7N52K3 525 V < 0.98 ? 6.2 A (1) 25 W STP7N52K3 525 V < 0.98 ? 6.2 A 90 W 1. Limited by package 3 100% avalanche tested

5.2. stb7nb40.pdf Size:61K _st

STB7NK80Z-1
STB7NK80Z-1

STB7NB40 N - CHANNEL ENHANCEMENT MODE PowerMESH? MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STB7NB40 400 V < 0.9 ? 7.0 A TYPICAL R = 0.75 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 VERY LOW INTRINSIC CAPACITANCES 1 GATE CHARGE MINIMIZED FOR THROUGH-HOLE VERSION CONTACT D2PAK SALES OFFICE TO-263 DESCRIPTION (Suffix T4) Using the latest high voltage

 5.3. stb7nb50.pdf Size:99K _st

STB7NK80Z-1
STB7NK80Z-1

STB7NB60 ? N - CHANNEL 600V - 1.0 OMH - 7.2A - I2PAK/D2PAK PowerMESH? MOSFET TYPE VDSS RDS(on) ID STB7NB60 600 V < 1.2 ? 7.2 A TYPICAL R = 1.0 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED 3 VERY LOW INTRINSIC CAPACITANCES 1 3 GATE CHARGE MINIMIZED 2 1 I2PAK D2PAK DESCRIPTION TO-262 TO-252 Using the latest high voltage MESH OVERLAY? (suffix -1) (Suffix

5.4. stb7na40.pdf Size:125K _st

STB7NK80Z-1
STB7NK80Z-1

STB7NA40 N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE V R I DSS DS(on ) D STB7NA40 400 V < 1 ? 6.5 A n TYPICAL RDS(on) = 0.82 ? n 30V GATE TO SOURCE VOLTAGE RATING n 100% AVALANCHE TESTED n REPETITIVE AVALANCHE DATA AT 100oC n LOW INTRINSIC CAPACITANCES n GATE CHARGE MINIMIZED 3 3 2 n REDUCED THRESHOLD VOLTAGE SPREAD 1 1 n THROUGH-HOLE I2PAK (TO-262) POWER PACKAGE

 5.5. stb7n52k3 std7n52k3 stf7n52k3 stp7n52k3 2.pdf Size:1317K _st

STB7NK80Z-1
STB7NK80Z-1

STB7N52K3, STD7N52K3 STF7N52K3, STP7N52K3 N-channel 525 V, 0.72 ?, 6 A, D?PAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET Features RDS(on) Order codes VDSS ID Pw max. 3 3 1 1 STB7N52K3 90 W DPAK D?PAK STD7N52K3 90 W 525 V < 0.85 ? 6 A STF7N52K3 25 W STP7N52K3 90 W 100% avalanche tested 3 3 2 Extremely high dv/dt capability 2 1 1 Gate charge minimized TO-220 TO

Otros transistores... STB70NF3LL , STB70NFS03L , STB75NF20 , STB75NF75 , STB75NF75L , STB76NF75 , STB7N52K3 , STB7NK80Z , IRFP4332 , STB80N20M5 , STB80NF03L-04 , STB80NF03L-04T4 , STB80NF10 , STB80NF55-08T4 , STB80NF55L-06 , STB80NF55L-08-1 , STB80PF55 .

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