STB7NK80Z-1 MOSFET. Datasheet pdf. Equivalent

   Type Designator: STB7NK80Z-1
   Marking Code: B7NK80Z
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 125 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 800 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 4.5 V
   |Id|ⓘ - Maximum Drain Current: 5.2 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 40 nC
   trⓘ - Rise Time: 12 nS
   Cossⓘ - Output Capacitance: 122 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm
   Package: I2PAK

STB7NK80Z-1 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

STB7NK80Z-1 Datasheet (PDF)

..1. Size:937K st
stb7nk80zt4 stb7nk80z stb7nk80z-1 stp7nk80zfp stp7nk80z.pdf

STB7NK80Z, STB7NK80Z-1STP7NK80ZFP, STP7NK80ZN-channel 800 V, 1.5 , 5.2 A, TO-220,TO-220FP,D2PAK,I2PAKZener-protected SuperMESH Power MOSFETFeaturesVDSS Type RDS(on) ID(@Tjmax)STP7NK80Z 800V

..2. Size:935K st
stb7nk80z stb7nk80z-1 stp7nk80zfp stp7nk80z.pdf

STB7NK80Z, STB7NK80Z-1STP7NK80ZFP, STP7NK80ZN-channel 800 V, 1.5 , 5.2 A, TO-220,TO-220FP,D2PAK,I2PAKZener-protected SuperMESH Power MOSFETFeaturesVDSS Type RDS(on) ID(@Tjmax)STP7NK80Z 800V

9.1. Size:1194K st
stb7n52k3 std7n52k3 stf7n52k3 stp7n52k3.pdf

STB7N52K3, STD7N52K3STF7N52K3, STP7N52K3N-channel 525 V, 0.84 , 6.2 A, D2PAK, DPAK, TO-220FP, TO-220SuperMESH3 Power MOSFETFeaturesRDS(on) Type VDSS ID Pwmax 3311STB7N52K3 525 V

9.2. Size:1317K st
stb7n52k3 std7n52k3 stf7n52k3 stp7n52k3 2.pdf

STB7N52K3, STD7N52K3STF7N52K3, STP7N52K3N-channel 525 V, 0.72 , 6 A, DPAK, DPAK, TO-220FP, TO-220SuperMESH3 Power MOSFETFeaturesRDS(on) Order codes VDSS ID Pwmax. 3311STB7N52K3 90 WDPAKDPAKSTD7N52K3 90 W525 V

9.3. Size:125K st
stb7na40.pdf