STB7NK80Z-1 MOSFET Datasheet: N-Ch, 800V, 5.2A. Full specification with pinout and replacement list

STB7NK80Z-1 Specs and Replacement

Type Designator: STB7NK80Z-1

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 125 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 800 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 5.2 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 122 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 1.8 Ohm

Package: I2PAK

STB7NK80Z-1 substitution

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STB7NK80Z-1 datasheet

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STB7NK80Z, STB7NK80Z-1 STP7NK80ZFP, STP7NK80Z N-channel 800 V, 1.5 , 5.2 A, TO-220,TO-220FP,D2PAK,I2PAK Zener-protected SuperMESH Power MOSFET Features VDSS Type RDS(on) ID (@Tjmax) STP7NK80Z 800V ... See More ⇒

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