STD100N3LF3 Todos los transistores

 

STD100N3LF3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STD100N3LF3

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 110 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Corriente continua de drenaje (Id): 80 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 2.5 V

Carga de compuerta (Qg): 20 nC

Resistencia drenaje-fuente RDS(on): 0.0055 Ohm

Empaquetado / Estuche: DPAK

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STD100N3LF3 Datasheet (PDF)

1.1. std100n3lf3.pdf Size:331K _st

STD100N3LF3
STD100N3LF3

STD100N3LF3 N-channel 30 V, 0.0045 Ω, 80 A, DPAK planar STripFET™ II Power MOSFET Features Type VDSSS RDS(on) ID Pw STD100N3LF3 30 V <0.0055 Ω 80 A(1) 110 W 3 1. Current limited by package 1 ■ 100% avalanche tested DPAK ■ Logic level threshold Applications ■ Switching application Figure 1. Internal schematic diagram – Automotive D (TAB or 2) Description This STri

3.1. std100nh03lt4.pdf Size:488K _st

STD100N3LF3
STD100N3LF3

STD100NH03L N-channel 30V - 0.005Ω - 60A - DPAK STripFET™ III Power MOSFET General features VDSSS RDS(on) ID Type STD100NH03L 30V <0.0055Ω 60A(1) 1. Value limited by wire bonding 3 1 ■ RDS(on) * Qg industry’s benchmark DPAK ■ Conduction losses reduced ■ Switching losses reduced ■ Low threshold device Description Internal schematic diagram This device utilizes th

3.2. std100nh02lt4.pdf Size:488K _st

STD100N3LF3
STD100N3LF3

STD100NH02L STD100NH02L-1 N-channel 24V - 0.0042Ω - 60A - DPAK - IPAK STripFET™ II Power MOSFET General features VDSSS RDS(on) ID Type STD100NH02L 24V <0.0048Ω 60A(1) 3 3 STD100NH02L-1 24V <0.0048Ω 60A(1) 2 1 1 1. Value limited by wire bonding DPAK IPAK ■ RDS(on) * Qg industry’s benchmark ■ Conduction losses reduced ■ Switching losses reduced ■ Low threshold

 3.3. std100nh02l.pdf Size:489K _st

STD100N3LF3
STD100N3LF3

STD100NH02L STD100NH02L-1 N-channel 24V - 0.0042Ω - 60A - DPAK - IPAK STripFET™ II Power MOSFET General features VDSSS RDS(on) ID Type STD100NH02L 24V <0.0048Ω 60A(1) 3 3 STD100NH02L-1 24V <0.0048Ω 60A(1) 2 1 1 1. Value limited by wire bonding DPAK IPAK ■ RDS(on) * Qg industry’s benchmark ■ Conduction losses reduced ■ Switching losses reduced ■ Low threshold

3.4. std100n03lt4.pdf Size:457K _st

STD100N3LF3
STD100N3LF3

STD100N03L STD100N03L-1 N-channel 30V - 0.0045Ω - 80A - DPAK - IPAK Planar STripFET™ II Power MOSFET General features VDSSS RDS(on) ID Type Pw STD100N03L 30 V <0.0055 Ω 80 A(1) 110 W 3 3 STD100N03L-1 30 V <0.0055 Ω 80 A(1) 110 W 2 1 1 1. Current limited by package DPAK IPAK ■ 100% avalanche tested ■ Logic level threshold Description Internal schematic diagram Thi

 3.5. stb100n10f7 std100n10f7 stf100n10f7 stf100n10f7 stp100n10f7.pdf Size:1657K _st

STD100N3LF3
STD100N3LF3

STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7 N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET™ VII DeepGATE™ Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220 Datasheet - production data Features TAB TAB RDS(on) 3 Order codes VDS max ID PTOT 1 3 1 DPAK STB100N10F7 80 A 120 W D2PAK STD100N10F7 80 A 120W TAB 100 V 0.008 Ω STF100N10F7 45 A 30 W STP100N10F7 80A 150 W

3.6. std100n10f7.pdf Size:243K _inchange_semiconductor

STD100N3LF3
STD100N3LF3

isc N-Channel MOSFET Transistor STD100N10F7 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤8mΩ ·Enhancement mode: ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gat

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