STD100N3LF3 Datasheet PDF and Equivalents Search

 ..1. Size:331K  st
 std100n3lf3.pdf

STD100N3LF3 N-channel 30 V, 0.0045 , 80 A, DPAK planar STripFET II Power MOSFET Features Type VDSSS RDS(on) ID Pw STD100N3LF3 30 V ... See More ⇒

 7.1. Size:488K  st
 std100nh03lt4.pdf

STD100NH03L N-channel 30V - 0.005 - 60A - DPAK STripFET III Power MOSFET General features VDSSS RDS(on) ID Type STD100NH03L 30V ... See More ⇒

 7.2. Size:1657K  st
 stb100n10f7 std100n10f7 stf100n10f7 stf100n10f7 stp100n10f7.pdf

STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7 N-channel 100 V, 0.0068 typ., 80 A, STripFET VII DeepGATE Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220 Datasheet - production data Features TAB TAB RDS(on) 3 Order codes VDS max ID PTOT 1 3 1 DPAK STB100N10F7 80 A 120 W D2PAK STD100N10F7 80 A 120W TAB 100 V 0.008 STF100N10F7 45 A 30 W STP100N10F7 80A 150 W ... See More ⇒

 7.3. Size:489K  st
 std100nh02l.pdf

STD100NH02L STD100NH02L-1 N-channel 24V - 0.0042 - 60A - DPAK - IPAK STripFET II Power MOSFET General features VDSSS RDS(on) ID Type STD100NH02L 24V ... See More ⇒

 7.4. Size:648K  st
 stb100n10f7 std100n10f7 stf100n10f7 sti100n10f7 stp100n10f7.pdf

STB100N10F7, STD100N10F7, STF100N10F7 STI100N10F7, STP100N10F7 Datasheet N-channel 100 V, 6.8 m typ., 80 A STripFET F7 Power MOSFETs in D2PAK, DPAK, TO-220FP, I2PAK and TO-220 packages TAB TAB Features 2 3 1 VDS RDS(on) max. ID Order codes Package 3 1 D2PAK DPAK STB100N10F7 80 A D2PAK TAB TAB STD100N10F7 80 A DPAK STF100N10F7 100 V 8.0 m 45 A TO-220FP 3 3 2 3 1 2 ... See More ⇒

 7.5. Size:457K  st
 std100n03lt4.pdf

STD100N03L STD100N03L-1 N-channel 30V - 0.0045 - 80A - DPAK - IPAK Planar STripFET II Power MOSFET General features VDSSS RDS(on) ID Type Pw STD100N03L 30 V ... See More ⇒

 7.6. Size:488K  st
 std100nh02lt4.pdf

STD100NH02L STD100NH02L-1 N-channel 24V - 0.0042 - 60A - DPAK - IPAK STripFET II Power MOSFET General features VDSSS RDS(on) ID Type STD100NH02L 24V ... See More ⇒

 7.7. Size:243K  inchange semiconductor
 std100n10f7.pdf

isc N-Channel MOSFET Transistor STD100N10F7 FEATURES Static drain-source on-resistance RDS(on) 8m Enhancement mode 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 100 V DSS V Gat... See More ⇒