All MOSFET. STD100N3LF3 Datasheet

 

STD100N3LF3 MOSFET. Datasheet pdf. Equivalent

Type Designator: STD100N3LF3

Marking Code: 100N3LF3

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 110 W

Maximum Drain-Source Voltage |Vds|: 30 V

Maximum Gate-Source Voltage |Vgs|: 20 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 2.5 V

Maximum Drain Current |Id|: 80 A

Maximum Junction Temperature (Tj): 175 °C

Total Gate Charge (Qg): 20 nC

Rise Time (tr): 205 nS

Drain-Source Capacitance (Cd): 728 pF

Maximum Drain-Source On-State Resistance (Rds): 0.0055 Ohm

Package: DPAK

STD100N3LF3 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD100N3LF3 Datasheet (PDF)

0.1. std100n3lf3.pdf Size:331K _st

STD100N3LF3
STD100N3LF3

STD100N3LF3N-channel 30 V, 0.0045 , 80 A, DPAKplanar STripFET II Power MOSFETFeaturesType VDSSS RDS(on) ID PwSTD100N3LF3 30 V

7.1. std100nh03lt4.pdf Size:488K _st

STD100N3LF3
STD100N3LF3

STD100NH03LN-channel 30V - 0.005 - 60A - DPAKSTripFET III Power MOSFETGeneral featuresVDSSS RDS(on) IDTypeSTD100NH03L 30V

7.2. std100nh02lt4.pdf Size:488K _st

STD100N3LF3
STD100N3LF3

STD100NH02LSTD100NH02L-1N-channel 24V - 0.0042 - 60A - DPAK - IPAKSTripFET II Power MOSFETGeneral featuresVDSSS RDS(on) IDTypeSTD100NH02L 24V

 7.3. std100nh02l.pdf Size:489K _st

STD100N3LF3
STD100N3LF3

STD100NH02LSTD100NH02L-1N-channel 24V - 0.0042 - 60A - DPAK - IPAKSTripFET II Power MOSFETGeneral featuresVDSSS RDS(on) IDTypeSTD100NH02L 24V

7.4. std100n03lt4.pdf Size:457K _st

STD100N3LF3
STD100N3LF3

STD100N03LSTD100N03L-1N-channel 30V - 0.0045 - 80A - DPAK - IPAKPlanar STripFET II Power MOSFETGeneral featuresVDSSS RDS(on) IDType PwSTD100N03L 30 V

 7.5. stb100n10f7 std100n10f7 stf100n10f7 stf100n10f7 stp100n10f7.pdf Size:1657K _st

STD100N3LF3
STD100N3LF3

STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7N-channel 100 V, 0.0068 typ., 80 A, STripFET VII DeepGATE Power MOSFET in D2PAK, DPAK, TO-220FP and TO-220Datasheet - production dataFeaturesTAB TABRDS(on) 3Order codes VDS max ID PTOT131 DPAKSTB100N10F7 80 A 120 WD2PAKSTD100N10F7 80 A 120WTAB100 V 0.008 STF100N10F7 45 A 30 WSTP100N10F7 80A 150 W

7.6. std100n10f7.pdf Size:243K _inchange_semiconductor

STD100N3LF3
STD100N3LF3

isc N-Channel MOSFET Transistor STD100N10F7FEATURESStatic drain-source on-resistance:RDS(on)8mEnhancement mode:100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Voltage 100 VDSSV Gat

Datasheet: STB8NM60 , STB8NM60D , STB95N3LLH6 , STB9NK50Z , STB9NK60Z , STB9NK60ZD , STB9NK70Z-1 , STB9NK90Z , 2SK3568 , STD10NF10 , STD10NM50N , STD10NM60N , STD10NM60ND , STD10NM65N , STD10PF06 , STD11NM50N , STD11NM60ND .

 

 
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