STD10NM60N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STD10NM60N
Código: 10NM60N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 70 W
Voltaje máximo drenador - fuente |Vds|: 600 V
Voltaje máximo fuente - puerta |Vgs|: 25 V
Corriente continua de drenaje |Id|: 10 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 19 nC
Tiempo de subida (tr): 12 nS
Conductancia de drenaje-sustrato (Cd): 44 pF
Resistencia entre drenaje y fuente RDS(on): 0.55 Ohm
Paquete / Cubierta: DPAK
Búsqueda de reemplazo de MOSFET STD10NM60N
STD10NM60N Datasheet (PDF)
std10nm60n stf10nm60n stp10nm60n stu10nm60n.pdf
STD10NM60N, STF10NM60NSTP10NM60N, STU10NM60NN-channel 600 V, 0.53 , 10 A, DPAK, TO-220, TO-220FP, IPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Order codes ID Pw@TJmax max.33STD10NM60N 70 W2211STF10NM60N 25 WTO-220 TO-220FP650 V
std10nm60n stf10nm60n stp10nm60n stu10nm60n 2.pdf
STD10NM60N, STF10NM60NSTP10NM60N, STU10NM60NN-channel 600 V, 0.53 , 8 A, DPAK, TO-220, TO-220FP, IPAKMDmesh II Power MOSFETFeaturesVDSS RDS(on) Type ID Pw@TJmax max.33STD10NM60N 70 W2211STF10NM60N 25 WTO-220 TO-220FP650 V
std10nm60n stf10nm60n sti10nm60n stp10nm60n stu10nm60n.pdf
STD10NM60N, STF10NM60N,STI10NM60N, STP10NM60N, STU10NM60NN-channel 600 V, 0.53 typ., 10 A MDmesh II Power MOSFET in DPAK, TO-220FP, IPAK, TO-220 and IPAK packagesDatasheet production dataFeaturesTABTABVDSS RDS(on) Order codes ID Pw@TJmax max.313STD10NM60N 70 W 3221DPAK 1STF10NM60N 25 WIPAKTO-220FPSTI10NM60N 650 V
std10nm60n.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STD10NM60NFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
std10nm60nd stf10nm60nd stp10nm60nd.pdf
STD10NM60ND, STF10NM60ND, STP10NM60ND N-channel 600 V, 0.57 typ., 8 A, FDmesh II Power MOSFETs in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features V @ R DS DS(on)Order code I P D TOTT max. jmax.STD10NM60ND 70 W STF10NM60ND 650 V 0.60 8 A 25 W STP10NM60ND 70 W Fast-recovery body diode Low gate charge and input capacitance
std10nm65n stf10nm65n stp10nm65n stu10nm65n.pdf
STD10NM65N - STF10NM65NSTP10NM65N - STU10NM65NN-channel 650 V, 0.43 , 9 A MDmesh II Power MOSFETTO-220, TO-220FP, IPAK, DPAKFeaturesVDSS RDS(on) Type ID3(@Tjmax) max2312STD10NM65N 710 V
std10nm65n.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STD10NM65NFEATURESWith To-252(DPAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsLoad switchPower managementABSOLUTE MAXIMUM RATINGS(T
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