STD13NM60N Todos los transistores

 

STD13NM60N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STD13NM60N

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 90 W

Tensión drenaje-fuente (Vds): 600 V

Tensión compuerta-fuente (Vgs): 25 V

Corriente continua de drenaje (Id): 11 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 4 V

Carga de compuerta (Qg): 30 nC

Resistencia drenaje-fuente RDS(on): 0.36 Ohm

Empaquetado / Estuche: DPAK

Búsqueda de reemplazo de MOSFET STD13NM60N

 

STD13NM60N Datasheet (PDF)

1.1. std13nm60nd stf13nm60nd stp13nm60nd.pdf Size:1546K _st

STD13NM60N
STD13NM60N

STD13NM60ND, STF13NM60ND, STP13NM60ND N-channel 600 V, 0.32 Ω typ., 11 A, FDmesh™ II Power MOSFET (with fast diode) in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB Order codes VDS @ TJmax RDS(on) max ID 3 1 3 STD13NM60ND 2 1 DPAK STF13NM60ND 650 V 0.38 Ω 11 A TO-220FP STP13NM60ND TAB • The worldwide best RDS(on)* area among fast recove

1.2. stb13nm60n std13nm60n stf13nm60n stp13nm60n stw13nm60n.pdf Size:1276K _st

STD13NM60N
STD13NM60N

STB13NM60N,STD13NM60N,STF13NM60N STP13NM60N,STW13NM60N N-channel 600 V, 0.28 Ω, 11 A MDmesh™ II Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220, TO-247 Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 STB13NM60N 650 V < 0.36 Ω 11 A 1 1 3 TO-220FP TO-220 STD13NM60N 650 V < 0.36 Ω 11 A 1 STF13NM60N 650 V < 0.36 Ω 11 A DPAK STP13NM60N 650 V < 0.36 Ω 11 A STW13NM6

 4.1. std13n65m2.pdf Size:550K _st

STD13NM60N
STD13NM60N

STD13N65M2 N-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max ID TAB STD13N65M2 650 V 0.43 Ω 10 A • Extremely low gate charge 3 2 • Excellent output capacitance (Coss) profile 1 • 100% avalanche tested • Zener-protected DPAK Applications • Switching applications Figure 1. I

4.2. stb13n60m2 std13n60m2.pdf Size:1515K _st

STD13NM60N
STD13NM60N

STB13N60M2, STD13N60M2 N-channel 600 V, 0.35 Ω typ., 11 A MDmesh II Plus™ low Qg Power MOSFETs in D2PAK and DPAK packages Datasheet - production data Features Order codes VDS @ TJmax RDS(on) max ID STB13N60M2 TAB 650 V 0.38 Ω 11 A STD13N60M2 TAB 3 3 • Extremely low gate charge 1 1 • Lower RDS(on) x area vs previous generation DPAK D2PAK • Low gate input resistance

Otros transistores... STD11NM60ND , STD120N4F6 , STD120N4LF6 , STD12N65M5 , STD12NF06 , STD12NF06L , STD12NF06T4 , STD12NM50ND , 2SK2611 , STD14NM50N , STD150N3LLH6 , STD155N3H6 , STD155N3LH6 , STD15NF10 , STD16N65M5 , STD16NF06 , STD16NF06L .

 

 
Back to Top

 


STD13NM60N
  STD13NM60N
  STD13NM60N
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

MOSFET: 12N65KG-TQ | 12N65KG-TF | 12N65KG-TA | 12N65KL-TQ | 12N65KL-TA | IRFU430A | IRFSL7787 | IRFSL7762 | IRFSL4510 | IRFP4905 | IRFP3207Z | IRFL3713S | IPI80CN10N | IPI600N25N3 | IPI530N15N3 |

 

 

 
Back to Top