STB13NM60N, STD13NM60NN-channel 600 V, 0.28 typ., 11 A MDmesh II Power MOSFETs in DPAK and DPAK packagesDatasheet production dataFeatures Order code VDS (@Tjmax) RDS(on) max IDSTB13NM60NTAB650 V 0.36 11 ATABSTD13NM60N3 100% avalanche tested31 1 Low input capacitance and gate chargeDPAKDPAK Low gate input resistanceApplications

STB13NM60N,STD13NM60N,STF13NM60NSTP13NM60N,STW13NM60NN-channel 600 V, 0.28 , 11 A MDmesh II Power MOSFETin D2PAK, DPAK, TO-220FP, TO-220, TO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) max3322STB13NM60N 650 V

STD13NM60ND, STF13NM60ND, STP13NM60NDN-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK, TO-220FP and TO-220 packagesDatasheet - production dataFeaturesTABOrder codes VDS @ TJmax RDS(on) max ID313STD13NM60ND21DPAKSTF13NM60ND 650 V 0.38 11 ATO-220FPSTP13NM60NDTAB The worldwide best RDS(on)* area among fast recove

STD13N65M2N-channel 650 V, 0.37 typ., 10 A MDmesh M2 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDTABSTD13N65M2 650 V 0.43 10 A Extremely low gate charge32 Excellent output capacitance (Coss) profile 1 100% avalanche tested Zener-protectedDPAKApplications Switching applicationsFigure 1. I

STB13N60M2, STD13N60M2N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in D2PAK and DPAK packagesDatasheet - production dataFeaturesOrder codes VDS @ TJmax RDS(on) max IDSTB13N60M2TAB650 V 0.38 11 ASTD13N60M2TAB33 Extremely low gate charge11 Lower RDS(on) x area vs previous generationDPAKD2PAK Low gate input resistance

STD13N60DM2DatasheetN-channel 600 V, 0.310 typ., 11 A MDmesh DM2 Power MOSFET in a DPAK packageVDS RDS(on) max. IDOrder codesTABSTD13N60DM2 600 V 0.365 11 A Fast-recovery body diode321 Extremely low gate charge and input capacitanceDPAK Low on-resistance 100% avalanche testedD(2, TAB) Extremely high dv/dt ruggedness Zener-protected

STD13N50DM2AGDatasheetAutomotive-grade N-channel 500 V, 320 m typ., 11 A MDmesh DM2 Power MOSFET in a DPAK packageFeaturesVDS RDS(on ) max. IDOrder codeTABSTD13N50DM2AG 500 V 360 m 11 A321DPAK AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitanceD(2, TAB) Low on-resistance 100% avalanche tested E