STD13NM60N - описание и поиск аналогов

STB13NM60N, STD13NM60N N-channel 600 V, 0.28 typ., 11 A MDmesh II Power MOSFETs in D PAK and DPAK packages Datasheet production data Features Order code VDS (@Tjmax) RDS(on) max ID STB13NM60N TAB 650 V 0.36 11 A TAB STD13NM60N 3 100% avalanche tested 3 1 1 Low input capacitance and gate charge DPAK D PAK Low gate input resistance Applications

STB13NM60N,STD13NM60N,STF13NM60N STP13NM60N,STW13NM60N N-channel 600 V, 0.28 , 11 A MDmesh II Power MOSFET in D2PAK, DPAK, TO-220FP, TO-220, TO-247 Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 2 2 STB13NM60N 650 V

STD13NM60ND, STF13NM60ND, STP13NM60ND N-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK, TO-220FP and TO-220 packages Datasheet - production data Features TAB Order codes VDS @ TJmax RDS(on) max ID 3 1 3 STD13NM60ND 2 1 DPAK STF13NM60ND 650 V 0.38 11 A TO-220FP STP13NM60ND TAB The worldwide best RDS(on)* area among fast recove

STD13N65M2 N-channel 650 V, 0.37 typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max ID TAB STD13N65M2 650 V 0.43 10 A Extremely low gate charge 3 2 Excellent output capacitance (Coss) profile 1 100% avalanche tested Zener-protected DPAK Applications Switching applications Figure 1. I

STB13N60M2, STD13N60M2 N-channel 600 V, 0.35 typ., 11 A MDmesh II Plus low Qg Power MOSFETs in D2PAK and DPAK packages Datasheet - production data Features Order codes VDS @ TJmax RDS(on) max ID STB13N60M2 TAB 650 V 0.38 11 A STD13N60M2 TAB 3 3 Extremely low gate charge 1 1 Lower RDS(on) x area vs previous generation DPAK D2PAK Low gate input resistance

STD13N60DM2 Datasheet N-channel 600 V, 0.310 typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package VDS RDS(on) max. ID Order codes TAB STD13N60DM2 600 V 0.365 11 A Fast-recovery body diode 3 2 1 Extremely low gate charge and input capacitance DPAK Low on-resistance 100% avalanche tested D(2, TAB) Extremely high dv/dt ruggedness Zener-protected

STD13N50DM2AG Datasheet Automotive-grade N-channel 500 V, 320 m typ., 11 A MDmesh DM2 Power MOSFET in a DPAK package Features VDS RDS(on ) max. ID Order code TAB STD13N50DM2AG 500 V 360 m 11 A 3 2 1 DPAK AEC-Q101 qualified Fast-recovery body diode Extremely low gate charge and input capacitance D(2, TAB) Low on-resistance 100% avalanche tested E