STD14NM50N Todos los transistores

 ..1. Size:1281K  st
 stb14nm50n std14nm50n stp14nm50n stf14nm50n.pdf

STB14NM50N, STD14NM50N STF14NM50N, STP14NM50N N-channel 500 V, 0.28 , 12 A MDmesh II Power MOSFET in DPAK, D2PAK, TO-220 and TO-220FP Features VDSS @ RDS(on) Type ID 3 TJmax max 1 3 STB14NM50N 2 DPAK 1 STD14NM50N 550 V

 ..2. Size:1066K  st
 stb14nm50n std14nm50n stf14nm50n stp14nm50n.pdf

STB14NM50N, STD14NM50N STF14NM50N, STP14NM50N N-channel 500 V, 0.28 , 12 A MDmeshTM II Power MOSFET in DPAK, D2PAK, TO-220 and TO-220FP Features VDSS @ RDS(on) Type ID 3 TJmax max 1 3 STB14NM50N 2 DPAK 1 STD14NM50N 550 V

 ..3. Size:262K  inchange semiconductor
 std14nm50n.pdf

Isc N-Channel MOSFET Transistor STD14NM50N FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

 9.1. Size:551K  st
 std140n6f7.pdf

STD140N6F7 Datasheet N-channel 60 V, 3.1 m typ., 80 A STripFET F7 Power MOSFET in a DPAK package Features VDS RDS(on) max. ID PTOT Order code TAB STD140N6F7 60 V 3.8 m 80 A 134 W 3 2 1 Among the lowest RDS(on) on the market DPAK Excellent FoM (figure of merit) Low Crss/Ciss ratio for EMI immunity D(2, TAB) High avalanche ruggedness Applications Switc

 9.2. Size:457K  auk
 std1408pi.pdf

STD1408PI NPN Silicon Transistor Features Low saturation switching application Power amplifier Collector High Voltage V =80V Min. CEO 2 Complement to STB1017PI Base Base 1 1 Emitter Ordering Information 3 1 2 3 Part Number Marking Package TO-220F-3L STD1408PI STD1408 TO-220F-3L Marking Information Column 1 = Manufacturer Logo Column 2 =

 9.3. Size:262K  inchange semiconductor
 std140n6f7.pdf

Isc N-Channel MOSFET Transistor STD140N6F7 FEATURES With To-252(DPAK) package Low input capacitance and gate charge Low gate input resistance 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol