STD16N65M5 Todos los transistores

 

STD16N65M5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STD16N65M5
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 90 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 650 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
   |Id|ⓘ - Corriente continua de drenaje: 12 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   trⓘ - Tiempo de subida: 9 nS
   Cossⓘ - Capacitancia de salida: 30 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.299 Ohm
   Paquete / Cubierta: DPAK

 Búsqueda de reemplazo de MOSFET STD16N65M5

 

STD16N65M5 Datasheet (PDF)

 ..1. Size:844K  st
std16n65m5.pdf

STD16N65M5
STD16N65M5

STD16N65M5DatasheetN-channel 650 V, 0.230 typ., 12 A MDmesh M5 Power MOSFET in a DPAK packageFeaturesVDS at Tjmax. RDS(on) max. IDOrder codesTABSTD16N65M5 710 V 0.279 12 A321 Extremely low RDS(on)DPAK Low gate charge and input capacitance Excellent switching performanceD(2, TAB) 100% avalanche testedApplications Switching applications

 ..2. Size:1032K  st
stb16n65m5 std16n65m5.pdf

STD16N65M5
STD16N65M5

STB16N65M5STD16N65M5N-channel 650 V, 0.270 , 12 A MDmesh V Power MOSFETin DPAK, DPAKFeaturesVDSS @ RDS(on) Type IDTJmax max.STB16N65M5710 V

 5.1. Size:938K  st
std16n65m2.pdf

STD16N65M5
STD16N65M5

STD16N65M2N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDTABSTD16N65M2 710 V 0.36 11 A Extremely low gate charge32 Excellent output capacitance (Coss) profile 1 100% avalanche tested Zener-protectedDPAKApplications Switching applicationsFig

 7.1. Size:440K  st
std16n60m2.pdf

STD16N65M5
STD16N65M5

STD16N60M2 N-channel 600 V, 0.280 typ., 12 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DSTD16N60M2 600 V 0.320 12 A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applications D(

 8.1. Size:55K  st
std16ne06l-.pdf

STD16N65M5
STD16N65M5

STD16NE06LN - CHANNEL 60V - 0.07 - 16A - DPAKSTripFET " POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTD16NE06L 60 V

 8.2. Size:1255K  st
std16n50m2 stf16n50m2 stp16n50m2.pdf

STD16N65M5
STD16N65M5

STD16N50M2, STF16N50M2, STP16N50M2N-channel 500 V, 0.24 typ.,13 A, MDmesh M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packagesDatasheet - preliminary dataFeaturesTAB3Order codes VDS @ TJmax RDS(on) max. ID1DPAKSTD16N50M2STF16N50M2 550 V 0.28 13 ASTP16N50M2TAB Extremely low gate charge Excellent output capacitance (Coss) profile3322 10

 8.3. Size:55K  st
std16ne06l-1.pdf

STD16N65M5
STD16N65M5

STD16NE06L-1N - CHANNEL 60V - 0.07 - 16A - TO-251STripFET " POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTD16NE06L-1 60 V

 8.4. Size:466K  st
std16nf25 stf16nf25 stp16nf25.pdf

STD16N65M5
STD16N65M5

STD16NF25STF16NF25 - STP16NF25N-channel 250V - 0.195 - 13A - DPAK/TO-220/TO-220FPLow gate charge STripFET II Power MOSFETFeaturesRDS(on) Type VDSS ID PwMax3STD16NF25 250V

 8.5. Size:688K  st
std16nf06t4.pdf

STD16N65M5
STD16N65M5

STD16NF06N-Channel 60V - 0.060 - 16A - DPAKSTripFET II Power MOSFETGeneral featuresVDSS RDS(on) IDTypeSTD16NF06 60V

 8.6. Size:88K  st
std16ne10.pdf

STD16N65M5
STD16N65M5

STD16NE10 N - CHANNEL 100V - 0.07 - 16A - IPAK/DPAKSTripFET MOSFETTYPE VDSS RDS(on) IDSTD16NE10 100 V

 8.7. Size:356K  st
std16nf06l-1.pdf

STD16N65M5
STD16N65M5

STD16NF06LSTD16NF06L-1N-channel 60V - 0.060 - 24A - DPAK/IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD16NF06L-1 60V

 8.8. Size:696K  st
std16nf06.pdf

STD16N65M5
STD16N65M5

STD16NF06N-Channel 60V - 0.060 - 16A - DPAKSTripFET II Power MOSFETGeneral featuresVDSS RDS(on) IDTypeSTD16NF06 60V

 8.9. Size:350K  st
std16nf06l-1 std16nf06lt4.pdf

STD16N65M5
STD16N65M5

STD16NF06LSTD16NF06L-1N-channel 60V - 0.060 - 24A - DPAK/IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD16NF06L-1 60V

 8.10. Size:835K  cn vbsemi
std16nf06.pdf

STD16N65M5
STD16N65M5

STD16NF06www.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n

Otros transistores... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

 

 
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