STD16N65M5
MOSFET. Datasheet pdf. Equivalent
Type Designator: STD16N65M5
Marking Code: 16N65M5
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 90
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 650
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 25
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 5
V
|Id|ⓘ - Maximum Drain Current: 12
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 31
nC
trⓘ - Rise Time: 9
nS
Cossⓘ -
Output Capacitance: 30
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.299
Ohm
Package:
DPAK
STD16N65M5
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD16N65M5
Datasheet (PDF)
..1. Size:844K st
std16n65m5.pdf 
STD16N65M5DatasheetN-channel 650 V, 0.230 typ., 12 A MDmesh M5 Power MOSFET in a DPAK packageFeaturesVDS at Tjmax. RDS(on) max. IDOrder codesTABSTD16N65M5 710 V 0.279 12 A321 Extremely low RDS(on)DPAK Low gate charge and input capacitance Excellent switching performanceD(2, TAB) 100% avalanche testedApplications Switching applications
..2. Size:1032K st
stb16n65m5 std16n65m5.pdf
STB16N65M5STD16N65M5N-channel 650 V, 0.270 , 12 A MDmesh V Power MOSFETin DPAK, DPAKFeaturesVDSS @ RDS(on) Type IDTJmax max.STB16N65M5710 V
5.1. Size:938K st
std16n65m2.pdf
STD16N65M2N-channel 650 V, 0.32 typ., 11 A MDmesh M2 Power MOSFET in a DPAK packageDatasheet - production dataFeaturesOrder code VDS @ TJmax RDS(on) max IDTABSTD16N65M2 710 V 0.36 11 A Extremely low gate charge32 Excellent output capacitance (Coss) profile 1 100% avalanche tested Zener-protectedDPAKApplications Switching applicationsFig
7.1. Size:440K st
std16n60m2.pdf
STD16N60M2 N-channel 600 V, 0.280 typ., 12 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I DS DS(on) DSTD16N60M2 600 V 0.320 12 A Extremely low gate charge Excellent output capacitance (COSS) profile 100% avalanche tested Zener-protected Figure 1: Internal schematic diagram Applications D(
8.1. Size:55K st
std16ne06l-.pdf
STD16NE06LN - CHANNEL 60V - 0.07 - 16A - DPAKSTripFET " POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTD16NE06L 60 V
8.2. Size:1255K st
std16n50m2 stf16n50m2 stp16n50m2.pdf
STD16N50M2, STF16N50M2, STP16N50M2N-channel 500 V, 0.24 typ.,13 A, MDmesh M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packagesDatasheet - preliminary dataFeaturesTAB3Order codes VDS @ TJmax RDS(on) max. ID1DPAKSTD16N50M2STF16N50M2 550 V 0.28 13 ASTP16N50M2TAB Extremely low gate charge Excellent output capacitance (Coss) profile3322 10
8.3. Size:55K st
std16ne06l-1.pdf
STD16NE06L-1N - CHANNEL 60V - 0.07 - 16A - TO-251STripFET " POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(on) IDSTD16NE06L-1 60 V
8.4. Size:466K st
std16nf25 stf16nf25 stp16nf25.pdf
STD16NF25STF16NF25 - STP16NF25N-channel 250V - 0.195 - 13A - DPAK/TO-220/TO-220FPLow gate charge STripFET II Power MOSFETFeaturesRDS(on) Type VDSS ID PwMax3STD16NF25 250V
8.5. Size:688K st
std16nf06t4.pdf
STD16NF06N-Channel 60V - 0.060 - 16A - DPAKSTripFET II Power MOSFETGeneral featuresVDSS RDS(on) IDTypeSTD16NF06 60V
8.6. Size:88K st
std16ne10.pdf
STD16NE10 N - CHANNEL 100V - 0.07 - 16A - IPAK/DPAKSTripFET MOSFETTYPE VDSS RDS(on) IDSTD16NE10 100 V
8.7. Size:356K st
std16nf06l-1.pdf
STD16NF06LSTD16NF06L-1N-channel 60V - 0.060 - 24A - DPAK/IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD16NF06L-1 60V
8.8. Size:696K st
std16nf06.pdf
STD16NF06N-Channel 60V - 0.060 - 16A - DPAKSTripFET II Power MOSFETGeneral featuresVDSS RDS(on) IDTypeSTD16NF06 60V
8.9. Size:350K st
std16nf06l-1 std16nf06lt4.pdf
STD16NF06LSTD16NF06L-1N-channel 60V - 0.060 - 24A - DPAK/IPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD16NF06L-1 60V
8.10. Size:835K cn vbsemi
std16nf06.pdf
STD16NF06www.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise n
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