STD18N55M5 Todos los transistores

 

STD18N55M5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STD18N55M5

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 90 W

Tensión drenaje-fuente (Vds): 550 V

Tensión compuerta-fuente (Vgs): 25 V

Corriente continua de drenaje (Id): 13 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 31 nC

Resistencia drenaje-fuente RDS(on): 0.24 Ohm

Empaquetado / Estuche: DPAK

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STD18N55M5 Datasheet (PDF)

1.1. stb18n55m5 std18n55m5 stf18n55m5 stp18n55m5.pdf Size:1247K _st

STD18N55M5
STD18N55M5

STB18N55M5, STD18N55M5 STF18N55M5, STP18N55M5 N-channel 550 V, 0.18 Ω, 13 A, MDmesh™ V Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220 Features VDSS RDS(on) Order codes ID 3 @TJmax max 1 3 1 STB18N55M5 DPAK D²PAK STD18N55M5 550 V < 0.24 Ω 13 A STF18N55M5 STP18N55M5 ■ DPAK worldwide best RDS(on) 3 3 ■ Higher VDSS rating 2 2 1 1 ■ High dv/dt capability TO

1.2. std18n55m5.pdf Size:262K _inchange_semiconductor

STD18N55M5
STD18N55M5

Isc N-Channel MOSFET Transistor STD18N55M5 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

 4.1. stb18n65m5 std18n65m5.pdf Size:1015K _st

STD18N55M5
STD18N55M5

STB18N65M5, STD18N65M5 N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in D²PAK and DPAK packages Datasheet — production data Features VDSS @ RDS(on) Order codes ID TAB TJmax max TAB STB18N65M5 710 V < 0.22 Ω 15 A 2 STD18N65M5 2 3 3 1 1 ■ Worldwide best RDS(on) * area D2PAK DPAK ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching per

4.2. stb18nf25 std18nf25.pdf Size:1107K _st

STD18N55M5
STD18N55M5

STB18NF25 STD18NF25 N-channel 250 V, 0.14 Ω, 17 A DPAK, D2PAK low gate charge STripFET™ II Power MOSFET Features RDS(on) Type VDSS ID PTOT max STB18NF25 250 V < 0.165 Ω 17 A 110 W STD18NF25 250 V < 0.165 Ω 17 A 110 W 3 3 1 1 ■ Low gate charge DPAK ■ 100% avalanche tested D²PAK ■ Exceptional dv/dt capability Application ■ Switching applications – Automot

 4.3. std18nf03l.pdf Size:304K _st

STD18N55M5
STD18N55M5

STD18NF03L N-channel 30V - 0.038Ω - 17A - DPAK STripFET™ II Power MOSFET Features Type VDSS RDS(on) ID STD18NF03L 30V <0.05Ω 17A ■ Exceptional dv/dt capability 3 1 ■ Low gate charge at 100°C DPAK ■ Application oriented characterization ■ 100% avalanche tested Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size"

4.4. std18n65m5.pdf Size:208K _inchange_semiconductor

STD18N55M5
STD18N55M5

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STD18N65M5 ·FEATURES ·Higher V rating DSS ·Excellent switching performance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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