All MOSFET. STD18N55M5 Datasheet

 

STD18N55M5 MOSFET. Datasheet pdf. Equivalent

Type Designator: STD18N55M5

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 90 W

Maximum Drain-Source Voltage |Vds|: 550 V

Maximum Gate-Source Voltage |Vgs|: 25 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 13 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 31 nC

Maximum Drain-Source On-State Resistance (Rds): 0.24 Ohm

Package: DPAK

STD18N55M5 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD18N55M5 Datasheet (PDF)

0.1. stb18n55m5 std18n55m5 stf18n55m5 stp18n55m5.pdf Size:1247K _st

STD18N55M5 STD18N55M5

STB18N55M5, STD18N55M5 STF18N55M5, STP18N55M5 N-channel 550 V, 0.18 Ω, 13 A, MDmesh™ V Power MOSFET in D²PAK, DPAK, TO-220FP and TO-220 Features VDSS RDS(on) Order codes ID 3 @TJmax max 1 3 1 STB18N55M5 DPAK D²PAK STD18N55M5 550 V < 0.24 Ω 13 A STF18N55M5 STP18N55M5 ■ DPAK worldwide best RDS(on) 3 3 ■ Higher VDSS rating 2 2 1 1 ■ High dv/dt capability TO

0.2. std18n55m5.pdf Size:262K _inchange_semiconductor

STD18N55M5 STD18N55M5

Isc N-Channel MOSFET Transistor STD18N55M5 ·FEATURES ·With To-252(DPAK) package ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Vol

 8.1. stb18n65m5 std18n65m5.pdf Size:1015K _st

STD18N55M5 STD18N55M5

STB18N65M5, STD18N65M5 N-channel 650 V, 0.198 Ω typ., 15 A MDmesh™ V Power MOSFET in D²PAK and DPAK packages Datasheet — production data Features VDSS @ RDS(on) Order codes ID TAB TJmax max TAB STB18N65M5 710 V < 0.22 Ω 15 A 2 STD18N65M5 2 3 3 1 1 ■ Worldwide best RDS(on) * area D2PAK DPAK ■ Higher VDSS rating and high dv/dt capability ■ Excellent switching per

8.2. stb18nf25 std18nf25.pdf Size:1107K _st

STD18N55M5 STD18N55M5

STB18NF25 STD18NF25 N-channel 250 V, 0.14 Ω, 17 A DPAK, D2PAK low gate charge STripFET™ II Power MOSFET Features RDS(on) Type VDSS ID PTOT max STB18NF25 250 V < 0.165 Ω 17 A 110 W STD18NF25 250 V < 0.165 Ω 17 A 110 W 3 3 1 1 ■ Low gate charge DPAK ■ 100% avalanche tested D²PAK ■ Exceptional dv/dt capability Application ■ Switching applications – Automot

 8.3. std18nf03l.pdf Size:304K _st

STD18N55M5 STD18N55M5

STD18NF03L N-channel 30V - 0.038Ω - 17A - DPAK STripFET™ II Power MOSFET Features Type VDSS RDS(on) ID STD18NF03L 30V <0.05Ω 17A ■ Exceptional dv/dt capability 3 1 ■ Low gate charge at 100°C DPAK ■ Application oriented characterization ■ 100% avalanche tested Description This Power MOSFET is the latest development of STMicroelectronics unique "Single Feature Size"

8.4. std18n65m5.pdf Size:208K _inchange_semiconductor

STD18N55M5 STD18N55M5

INCHANGE Semiconductor Isc N-Channel MOSFET Transistor STD18N65M5 ·FEATURES ·Higher V rating DSS ·Excellent switching performance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·APPLICATIONS ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 650 V DSS

Datasheet: STD155N3LH6 , STD15NF10 , STD16N65M5 , STD16NF06 , STD16NF06L , STD16NF25 , STD17NF03L , STD17NF25 , 2N5485 , STD18NF03L , STD18NF25 , STD1NK60 , STD1NK80Z , STD20NF06 , STD20NF06L , STD20NF10 , STD20NF20 .

 

 
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