STD1NK60 Todos los transistores

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STD1NK60 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STD1NK60

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 30 W

Tensión drenaje-fuente (Vds): 600 V

Corriente continua de drenaje (Id): 1 A

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 8.5 Ohm

Empaquetado / Estuche: DPAK

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STD1NK60 Datasheet (PDF)

1.1. std1nk60 std1nk60-1 stq1hnk60r stn1hnk60.pdf Size:427K _st

STD1NK60
STD1NK60

STD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 N-CHANNEL 600V - 8? - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID Pw STD1NK60 600 V < 8.5 ? 1 A 30 W STD1NK60-1 600 V < 8.5 ? 1 A 30 W 3 STQ1HNK60R 600 V < 8.5 ? 0.4 A 3 W 1 STN1HNK60 600 V < 8.5 ? 0.4 A 3.3 W TYPICAL RDS(on) = 8 ? TO-92 (Ammopack) DPAK EXTREMELY HIGH dv

4.1. stq1nk80zr-ap stn1nk80z std1nk80z std1nk80z-1.pdf Size:629K _st

STD1NK60
STD1NK60

STQ1NK80ZR-AP - STN1NK80Z STD1NK80Z - STD1NK80Z-1 N-CHANNEL 800V - 13 ? - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH MOSFET Table 1: General Features Figure 1: Package TYPE VDSS RDS(on) ID Pw 2 STQ1NK80ZR-AP 800 V < 16 ? 0.3 A 3 W STN1NK80Z 800 V < 16 ? 0.25A 2.5 W 3 STD1NK80Z 800 V < 16 ? 1.0 A 45 W 2 1 STD1NK80Z-1 800 V < 16 ? 1.0 A 45 W TYPICAL RDS(on) = 13? SOT-22

 5.1. std1nc60.pdf Size:280K _st

STD1NK60
STD1NK60

STD1NC60 N-CHANNEL 600V - 7? - 1.4A - DPAK/IPAK PowerMeshII MOSFET TYPE VDSS RDS(on) ID STD1NC60 600 V < 8 ? 1.4 A TYPICAL RDS(on) = 7 ? EXTREMELY HIGH dv/dt CAPABILITY 3 100% AVALANCHE TESTED 3 1 NEW HIGH VOLTAGE BENCHMARK 2 1 GATE CHARGE MINIMIZED IPAK DPAK DESCRIPTION TO-251 TO-252 The PowerMESHII is the evolution of the first generation of MESH OVERLAY. The layout re

5.2. std1nb80-1.pdf Size:56K _st

STD1NK60
STD1NK60

STD1NB80-1 N - CHANNEL 800V - 16? - 1A - IPAK PowerMESH? MOSFET PRELIMINARY DATA TYPE V R I DSS DS(on) D STD1NB80-1 800 V < 20 ? 1 A TYPICAL R = 16 ? DS(on) EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 3 2 DESCRIPTION 1 Using the latest high voltage MESH OVERLAY? IPAK process, STMicroelectronics has designed a

 5.3. std1na60.pdf Size:171K _st

STD1NK60
STD1NK60

STD1NA60 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STD1NA60 600 V < 8 ? 1.6 A TYPICAL R = 7.2 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 APPLICATION ORIENTED 3 2 CHARACTERIZATION 1 1 THROUGH-HOLE IPAK (TO-251) POWER PACKAGE IN TUBE (SUFFIX -1) SURFACE-MOUNTING DPAK (TO-252) IPAK DPAK

5.4. std1na60-.pdf Size:123K _st

STD1NK60
STD1NK60

STW9NA60 STH9NA60FI ? N - CHANNEL ENHANCEMENT MODE FAST POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STW9NA60 600 V < 0.8 ? 9.5 A STH9NA60FI 600 V < 0.8 ? 6.4 A TYPICAL R = 0.69 ? DS(on) 30V GATE TO SOURCE VOLTAGE RATING 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC LOW INTRINSIC CAPACITANCES 3 3 2 GATE CHARGE MINIMIZED 2 1 1 REDUCED THRESHOLD VOLTAGE SPREAD

Otros transistores... STD16NF06 , STD16NF06L , STD16NF25 , STD17NF03L , STD17NF25 , STD18N55M5 , STD18NF03L , STD18NF25 , FDS4435 , STD1NK80Z , STD20NF06 , STD20NF06L , STD20NF10 , STD20NF20 , STD25NF10 , STD25NF10LA , STD26NF10 .

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