STD1NK60 Spec and Replacement
Type Designator: STD1NK60
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 30 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 600 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 1 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 5 nS
Cossⓘ - Output Capacitance: 23.5 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 8.5 Ohm
Package: DPAK
STD1NK60 substitution
STD1NK60 Specs
std1nk60 std1nk60-1 stq1hnk60r stn1hnk60.pdf
STD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 N-CHANNEL 600V - 8 - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID Pw STD1NK60 600 V ... See More ⇒
std1nk60-1 std1nk60t4 std1nk60 std1nk60-1 stq1hnk60r stn1hnk60.pdf
STD1NK60 - STD1NK60-1 STQ1HNK60R - STN1HNK60 N-CHANNEL 600V - 8 - 1A DPAK/TO-92/IPAK/SOT-223 SuperMESH MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID Pw STD1NK60 600 V ... See More ⇒
std1nk60t4.pdf
STD1NK60T4 N-channel 600 V, 7.3 typ., 1 A SuperMESH Power MOSFET in a DPAK package Datasheet - production data Features Order code V R max. I P DS DS(on) D TOT STD1NK60T4 600 V 8.5 1 A 30 W Extremely high dv/dt capability ESD improved capability 100% avalanche tested Gate charge minimized Figure 1 Internal schematic diagram Applications L... See More ⇒
std1nk80z-1 std1nk80zt4 stq1nk80zr-ap.pdf
STQ1NK80ZR-AP - STN1NK80Z STD1NK80Z - STD1NK80Z-1 N-CHANNEL 800V - 13 - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH MOSFET Table 1 General Features Figure 1 Package TYPE VDSS RDS(on) ID Pw 2 STQ1NK80ZR-AP 800 V ... See More ⇒
Detailed specifications: STD16NF06 , STD16NF06L , STD16NF25 , STD17NF03L , STD17NF25 , STD18N55M5 , STD18NF03L , STD18NF25 , K2611 , STD1NK80Z , STD20NF06 , STD20NF06L , STD20NF10 , STD20NF20 , STD25NF10 , STD25NF10LA , STD26NF10 .
History: STD17NF25
Keywords - STD1NK60 MOSFET specs
STD1NK60 cross reference
STD1NK60 equivalent finder
STD1NK60 lookup
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