STD35N3LH5 Todos los transistores

 

STD35N3LH5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: STD35N3LH5
   Código: D35N3LH5
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS


   Máxima disipación de potencia (Pd): 35 W
   Voltaje máximo drenador - fuente |Vds|: 30 V
   Voltaje máximo fuente - puerta |Vgs|: 20 V
   Corriente continua de drenaje |Id|: 35 A
   Temperatura máxima de unión (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS


   Tensión umbral entre puerta y fuente |Vgs(th)|: 2.5 V
   Carga de la puerta (Qg): 6 nC
   Conductancia de drenaje-sustrato (Cd): 135 pF
   Resistencia entre drenaje y fuente RDS(on): 0.016 Ohm
   Paquete / Cubierta: DPAK

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STD35N3LH5 Datasheet (PDF)

 ..1. Size:493K  st
std35n3lh5.pdf

STD35N3LH5 STD35N3LH5

STD35N3LH5N-channel 30 V, 14 m, 35 A, DPAKSTripFET V Power MOSFETPreliminary dataFeaturesRDS(on) Type VDSS IDmaxSTD35N3LH5 30 V

 8.1. Size:321K  st
std35nf3ll.pdf

STD35N3LH5 STD35N3LH5

STD35NF3LLN-channel 30V - 0.014 - 35A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD35NF3LL 30V

 8.2. Size:646K  st
std35nf06lt4.pdf

STD35N3LH5 STD35N3LH5

STD35NF06LN-channel 60 V, 0.014 , 35 A STripFET II Power MOSFET in a DPAK packageDatasheet production dataFeaturesOrder code VDSS RDS(on) IDTABSTD35NF06LT4 60V

 8.3. Size:318K  st
std35nf3llt4.pdf

STD35N3LH5 STD35N3LH5

STD35NF3LLN-channel 30V - 0.014 - 35A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD35NF3LL 30V

 8.4. Size:313K  st
std35nf06t4.pdf

STD35N3LH5 STD35N3LH5

STD35NF06N-channel 60V - 0.018 - 35A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD35NF06 60V

 8.5. Size:322K  st
std35nf06.pdf

STD35N3LH5 STD35N3LH5

STD35NF06N-channel 60V - 0.018 - 35A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD35NF06 60V

 8.6. Size:325K  st
std35nf06l.pdf

STD35N3LH5 STD35N3LH5

STD35NF06LN-channel 60V - 0.014 - 35A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD35NF06L 60V

 8.7. Size:128K  samhop
stu35n10 std35n10.pdf

STD35N3LH5 STD35N3LH5

STU35N10GreenProductSTD35N10aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.21 @ VGS=10VTO-252 and TO-251 Package.100V 35A30 @ VGS=4.5V GSSTU SERIES STD SERIES( ) ( )TO - 252AA D- PAK TO -

 8.8. Size:1468K  cn vbsemi
std35nf06lt4.pdf

STD35N3LH5 STD35N3LH5

STD35NF06LT4www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim

 8.9. Size:771K  cn vbsemi
std35nf06t4.pdf

STD35N3LH5 STD35N3LH5

STD35NF06T4www.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise

Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , MMIS60R580P , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
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