STD35N3LH5
MOSFET. Datasheet pdf. Equivalent
Type Designator: STD35N3LH5
Marking Code: D35N3LH5
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 35
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20
V
|Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 2.5
V
|Id|ⓘ - Maximum Drain Current: 35
A
Tjⓘ - Maximum Junction Temperature: 175
°C
Qgⓘ - Total Gate Charge: 6
nC
Cossⓘ -
Output Capacitance: 135
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.016
Ohm
Package:
DPAK
STD35N3LH5
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD35N3LH5
Datasheet (PDF)
..1. Size:493K st
std35n3lh5.pdf 
STD35N3LH5N-channel 30 V, 14 m, 35 A, DPAKSTripFET V Power MOSFETPreliminary dataFeaturesRDS(on) Type VDSS IDmaxSTD35N3LH5 30 V
8.1. Size:321K st
std35nf3ll.pdf
STD35NF3LLN-channel 30V - 0.014 - 35A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD35NF3LL 30V
8.2. Size:646K st
std35nf06lt4.pdf
STD35NF06LN-channel 60 V, 0.014 , 35 A STripFET II Power MOSFET in a DPAK packageDatasheet production dataFeaturesOrder code VDSS RDS(on) IDTABSTD35NF06LT4 60V
8.3. Size:318K st
std35nf3llt4.pdf
STD35NF3LLN-channel 30V - 0.014 - 35A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD35NF3LL 30V
8.4. Size:313K st
std35nf06t4.pdf
STD35NF06N-channel 60V - 0.018 - 35A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD35NF06 60V
8.5. Size:322K st
std35nf06.pdf
STD35NF06N-channel 60V - 0.018 - 35A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD35NF06 60V
8.6. Size:325K st
std35nf06l.pdf
STD35NF06LN-channel 60V - 0.014 - 35A - DPAKSTripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD35NF06L 60V
8.7. Size:128K samhop
stu35n10 std35n10.pdf
STU35N10GreenProductSTD35N10aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.21 @ VGS=10VTO-252 and TO-251 Package.100V 35A30 @ VGS=4.5V GSSTU SERIES STD SERIES( ) ( )TO - 252AA D- PAK TO -
8.8. Size:1468K cn vbsemi
std35nf06lt4.pdf
STD35NF06LT4www.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.012 at VGS = 10 V 50 Material categorization:600.013 at VGS = 4.5 V 45DTO-252 GSG D S N-Channel MOSFETABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Lim
8.9. Size:771K cn vbsemi
std35nf06t4.pdf
STD35NF06T4www.VBsemi.twN-Channel 6 0-V (D-S) MOSFETFEATURESPRODUCT SUMMARY TrenchFET Power MOSFETVDS (V) rDS(on) ()ID (A)aAvailable 175 C Junction Temperature0.025 at VGS = 10 V 35RoHS*600.030 at VGS = 4.5 V 30 COMPLIANTTO-252 DGDrain Connected to TabG D SSTop ViewN-Channel MOSFETABSOLUTE MAXIMUM RATINGS TC = 25 C, unless otherwise
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