STD40N2LH5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STD40N2LH5STU40N2LH5N-channel 25 V, 0.01 , 40 A, DPAK, IPAKSTripFET V Power MOSFETFeaturesType VDSS RDS(on) max IDSTD40N2LH5 25 V 0.0118 40 A STU40N2LH5 25 V 0.0124 40 A332 RDS(on) * Qg industry benchmark11 Extremely low on-resistance RDS(on)DPAKIPAK Very low switching gate charge High avalanche ruggedness Low gate drive power l

STD40NF06N-CHANNEL 60V - 0.024 - 40A DPAKSTripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTD40NF06 60 V

STD40NF3LLN-channel 30V - 0.009 - 40A - DPAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD40NF3LL 30V

STD40NF03LN-channel 30V - 0.0090 - 40A - DPAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD40NF03L 30V

STD40NF3LLN-channel 30V - 0.009 - 40A - DPAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD40NF3LL 30V

STD40NF06LZN-CHANNEL 60V - 0.020 - 40A DPAKZener-Protected STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTD40NF06LZ 60 V

STD40NE03L N - CHANNEL 30V - 0.012 - 40A - DPAKSTripFET POWER MOSFETPRELIMINARY DATATYPE VDSS RDS(o n) IDSTD40NE03L 30 V

STP40NF10STD40NF10 - STB40NF10N-CHANNEL 100V - 0.024 - 50A TO-220/DPAK/D2PAKLOW GATE CHARGE STripFET II POWER MOSFETTYPE VDSS RDS(on) IDSTP40NF10 100 V

STD40NF10DatasheetN-channel 100 V, 25 m typ., 50 A, STripFET II Power MOSFET in a DPAK packageFeaturesVDS RDS(on) max. IDTypeTABSTD40NF10 100 V 28 m 50 A321 Exceptional dv/dt capabilityDPAK 100% avalanche tested Low gate chargeD(2, TAB)Applications Switching applicationsG(1)DescriptionThis Power MOSFET series has been developed using

STD40NF03LN-channel 30V - 0.0090 - 40A - DPAKLow gate charge STripFET II Power MOSFETGeneral featuresType VDSS RDS(on) IDSTD40NF03L 30V

STD40NF10STP40NF10N-channel 100V - 0.025 - 50A TO-220 / DPAKLow gate charge STripFET II Power MOSFETFeaturesType VDSS RDS(on) Max IDSTD40NF10 100V

GrerrPPrPrProSTU/D40N01aS mHop Microelectronics C orp.Ver 1.0N-Channel Logic Level Enhancement Mode Field Effect TransistorFEATURESPRODUCT SUMMARYSuper high dense cell design for low RDS(ON).RDS(ON) (m) TypVDSS IDRugged and reliable.100V 40A 18 @ VGS=10VTO-252 and TO-251 Package.GGSSSTU SERIESSTD SERIES( )TO - 252AA D- PAK ( )TO - 251 I