STD7NM80 Todos los transistores

 

STD7NM80 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STD7NM80

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 90 W

Tensión drenaje-fuente (Vds): 800 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 6.5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 18 nC

Resistencia drenaje-fuente RDS(on): 0.85 Ohm

Empaquetado / Estuche: DPAK

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STD7NM80 Datasheet (PDF)

1.1. std7nm80-1 std7nm80 stf7nm80 stp7nm80.pdf Size:971K _st

STD7NM80
STD7NM80

STD7NM80, STD7NM80-1 STF7NM80, STP7NM80 N-channel 800 V, 0.95 Ω, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh™ Power MOSFET Features Type VDSS RDS(on) ID STD7NM80 800 V < 1.05 Ω 6.5 A 3 3 2 2 1 1 STD7NM80-1 800 V < 1.05 Ω 6.5 A TO-220FP TO-220 STF7NM80 800 V < 1.05 Ω 6.5 A STP7NM80 800 V < 1.05 Ω 6.5 A ■ 100% avalanche tested 3 3 ■ Low input capacitance and gat

4.1. std7nm60n stf7nm60n stp7nm60n stu7nm60n.pdf Size:882K _st

STD7NM80
STD7NM80

STD7NM60N, STF7NM60N STP7NM60N, STU7NM60N N-channel 600 V, 5 A, 0.76 Ω, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh™ Power MOSFET Features VDSS @ RDS(on) Order codes ID 3 TJmax max. 2 3 2 1 1 STD7NM60N TO-220 IPAK STF7NM60N 650 V < 0.9 Ω 5 A STP7NM60N STU7NM60N 3 ■ 100% avalanche tested 1 3 2 1 ■ Low input capacitance and gate charge DPAK TO-220FP

4.2. std7nm50n-1 std7nm50n stf7nm50n stp7nm50n.pdf Size:426K _st

STD7NM80
STD7NM80

STD7NM50N - STD7NM50N-1 STF7NM50N - STP7NM50N N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET Features VDSS Type RDS(on) ID 3 (@Tjmax) 2 1 3 STD7NM50N 550V <0.78Ω 5A 2 IPAK 1 STD7NM50N-1 550V <0.78Ω 5A TO-220 STF7NM50N 550V <0.78Ω 5A (1) STP7NM50N 550V <0.78Ω 5A 3 1. Limited only by maximum temperature allowe

 4.3. std7nm64n.pdf Size:986K _st

STD7NM80
STD7NM80

STD7NM64N N-channel 640 V, 5 A, 0.88 Ω typ., MDmesh™ II Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID STD7NM64N 640 V 1.05 Ω 5 A TAB • 100% avalanche tested 3 • Low input capacitance and gate charge 1 • Low gate input resistance DPAK Applications • Switching applications Description Figure 1. Internal schematic

4.4. std7nm50n std7nm50n-1 stf7nm50n stp7nm50n.pdf Size:424K _st

STD7NM80
STD7NM80

STD7NM50N - STD7NM50N-1 STF7NM50N - STP7NM50N N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET Features VDSS Type RDS(on) ID 3 (@Tjmax) 2 1 3 STD7NM50N 550V <0.78Ω 5A 2 IPAK 1 STD7NM50N-1 550V <0.78Ω 5A TO-220 STF7NM50N 550V <0.78Ω 5A (1) STP7NM50N 550V <0.78Ω 5A 3 1. Limited only by maximum temperature allowe

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