All MOSFET. STD7NM80 Datasheet

 

STD7NM80 MOSFET. Datasheet pdf. Equivalent

Type Designator: STD7NM80

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 90 W

Maximum Drain-Source Voltage |Vds|: 800 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V

Maximum Drain Current |Id|: 6.5 A

Maximum Junction Temperature (Tj): 150 °C

Total Gate Charge (Qg): 18 nC

Maximum Drain-Source On-State Resistance (Rds): 0.85 Ohm

Package: DPAK

STD7NM80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD7NM80 Datasheet (PDF)

0.1. std7nm80-1 std7nm80 stf7nm80 stp7nm80.pdf Size:971K _st

STD7NM80
STD7NM80

STD7NM80, STD7NM80-1 STF7NM80, STP7NM80 N-channel 800 V, 0.95 Ω, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh™ Power MOSFET Features Type VDSS RDS(on) ID STD7NM80 800 V < 1.05 Ω 6.5 A 3 3 2 2 1 1 STD7NM80-1 800 V < 1.05 Ω 6.5 A TO-220FP TO-220 STF7NM80 800 V < 1.05 Ω 6.5 A STP7NM80 800 V < 1.05 Ω 6.5 A ■ 100% avalanche tested 3 3 ■ Low input capacitance and gat

8.1. std7nm60n stf7nm60n stp7nm60n stu7nm60n.pdf Size:882K _st

STD7NM80
STD7NM80

STD7NM60N, STF7NM60N STP7NM60N, STU7NM60N N-channel 600 V, 5 A, 0.76 Ω, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh™ Power MOSFET Features VDSS @ RDS(on) Order codes ID 3 TJmax max. 2 3 2 1 1 STD7NM60N TO-220 IPAK STF7NM60N 650 V < 0.9 Ω 5 A STP7NM60N STU7NM60N 3 ■ 100% avalanche tested 1 3 2 1 ■ Low input capacitance and gate charge DPAK TO-220FP

8.2. std7nm50n-1 std7nm50n stf7nm50n stp7nm50n.pdf Size:426K _st

STD7NM80
STD7NM80

STD7NM50N - STD7NM50N-1 STF7NM50N - STP7NM50N N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET Features VDSS Type RDS(on) ID 3 (@Tjmax) 2 1 3 STD7NM50N 550V <0.78Ω 5A 2 IPAK 1 STD7NM50N-1 550V <0.78Ω 5A TO-220 STF7NM50N 550V <0.78Ω 5A (1) STP7NM50N 550V <0.78Ω 5A 3 1. Limited only by maximum temperature allowe

 8.3. std7nm64n.pdf Size:986K _st

STD7NM80
STD7NM80

STD7NM64N N-channel 640 V, 5 A, 0.88 Ω typ., MDmesh™ II Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID STD7NM64N 640 V 1.05 Ω 5 A TAB • 100% avalanche tested 3 • Low input capacitance and gate charge 1 • Low gate input resistance DPAK Applications • Switching applications Description Figure 1. Internal schematic

8.4. std7nm50n std7nm50n-1 stf7nm50n stp7nm50n.pdf Size:424K _st

STD7NM80
STD7NM80

STD7NM50N - STD7NM50N-1 STF7NM50N - STP7NM50N N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET Features VDSS Type RDS(on) ID 3 (@Tjmax) 2 1 3 STD7NM50N 550V <0.78Ω 5A 2 IPAK 1 STD7NM50N-1 550V <0.78Ω 5A TO-220 STF7NM50N 550V <0.78Ω 5A (1) STP7NM50N 550V <0.78Ω 5A 3 1. Limited only by maximum temperature allowe

Datasheet: STD70N2LH5 , STD70N6F3 , STD70NS04ZL , STD75N3LLH6 , STD7N52DK3 , STD7N52K3 , STD7NK40Z , STD7NM60N , 2SK105 , STD7NM80-1 , STD7NS20 , STD85N3LH5 , STD86N3LH5 , STD8N65M5 , STD8NM50N , STD8NM60N , STD8NM60ND .

 

 
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