STD7NM80 MOSFET. Datasheet pdf. Equivalent
Type Designator: STD7NM80
Marking Code: D7NM80
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Maximum Power Dissipation (Pd): 90 W
Maximum Drain-Source Voltage |Vds|: 800 V
Maximum Gate-Source Voltage |Vgs|: 30 V
Maximum Gate-Threshold Voltage |Vgs(th)|: 5 V
Maximum Drain Current |Id|: 6.5 A
Maximum Junction Temperature (Tj): 150 °C
Total Gate Charge (Qg): 18 nC
Rise Time (tr): 8 nS
Drain-Source Capacitance (Cd): 460 pF
Maximum Drain-Source On-State Resistance (Rds): 1.05 Ohm
Package: DPAK
STD7NM80 Transistor Equivalent Substitute - MOSFET Cross-Reference Search
STD7NM80 Datasheet (PDF)
0.1. std7nm80-1 std7nm80 stf7nm80 stp7nm80.pdf 
Size:971K _st
STD7NM80, STD7NM80-1 STF7NM80, STP7NM80 N-channel 800 V, 0.95 Ω, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh™ Power MOSFET Features Type VDSS RDS(on) ID STD7NM80 800 V < 1.05 Ω 6.5 A 3 3 2 2 1 1 STD7NM80-1 800 V < 1.05 Ω 6.5 A TO-220FP TO-220 STF7NM80 800 V < 1.05 Ω 6.5 A STP7NM80 800 V < 1.05 Ω 6.5 A ■ 100% avalanche tested 3 3 ■ Low input capacitance and gat
8.1. std7nm60n stf7nm60n stp7nm60n stu7nm60n.pdf Size:882K _st
STD7NM60N, STF7NM60N STP7NM60N, STU7NM60N N-channel 600 V, 5 A, 0.76 Ω, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh™ Power MOSFET Features VDSS @ RDS(on) Order codes ID 3 TJmax max. 2 3 2 1 1 STD7NM60N TO-220 IPAK STF7NM60N 650 V < 0.9 Ω 5 A STP7NM60N STU7NM60N 3 ■ 100% avalanche tested 1 3 2 1 ■ Low input capacitance and gate charge DPAK TO-220FP
8.2. std7nm50n-1 std7nm50n stf7nm50n stp7nm50n.pdf Size:426K _st
STD7NM50N - STD7NM50N-1 STF7NM50N - STP7NM50N N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET Features VDSS Type RDS(on) ID 3 (@Tjmax) 2 1 3 STD7NM50N 550V <0.78Ω 5A 2 IPAK 1 STD7NM50N-1 550V <0.78Ω 5A TO-220 STF7NM50N 550V <0.78Ω 5A (1) STP7NM50N 550V <0.78Ω 5A 3 1. Limited only by maximum temperature allowe
8.3. std7nm64n.pdf Size:986K _st
STD7NM64N N-channel 640 V, 5 A, 0.88 Ω typ., MDmesh™ II Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID STD7NM64N 640 V 1.05 Ω 5 A TAB • 100% avalanche tested 3 • Low input capacitance and gate charge 1 • Low gate input resistance DPAK Applications • Switching applications Description Figure 1. Internal schematic
8.4. std7nm50n std7nm50n-1 stf7nm50n stp7nm50n.pdf Size:424K _st
STD7NM50N - STD7NM50N-1 STF7NM50N - STP7NM50N N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET Features VDSS Type RDS(on) ID 3 (@Tjmax) 2 1 3 STD7NM50N 550V <0.78Ω 5A 2 IPAK 1 STD7NM50N-1 550V <0.78Ω 5A TO-220 STF7NM50N 550V <0.78Ω 5A (1) STP7NM50N 550V <0.78Ω 5A 3 1. Limited only by maximum temperature allowe
Datasheet: STD70N2LH5 , STD70N6F3 , STD70NS04ZL , STD75N3LLH6 , STD7N52DK3 , STD7N52K3 , STD7NK40Z , STD7NM60N , 2SK105 , STD7NM80-1 , STD7NS20 , STD85N3LH5 , STD86N3LH5 , STD8N65M5 , STD8NM50N , STD8NM60N , STD8NM60ND .
