APT10088HVR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT10088HVR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 250 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 1000 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 11 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 10 nS

Cossⓘ - Capacitancia de salida: 350 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.88 Ohm

Encapsulados: TO258

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APT10088HVR datasheet

 ..1. Size:65K  apt
 apt10088hvr.pdf pdf_icon

APT10088HVR

APT10088HVR 1000V 11A 0.880 POWER MOS V TO-258 Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe

 7.1. Size:68K  apt
 apt10086bvfr.pdf pdf_icon

APT10088HVR

APT10086BVFR 1000V 13A 0.860 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Te

 7.2. Size:34K  apt
 apt10086blc.pdf pdf_icon

APT10088HVR

APT10086BLC APT10086SLC 1000V 13A 0.860W BLC TM POWER MOS VI D3PAK Power MOS VITM is a new generation of low gate charge, high voltage TO-247 N-Channel enhancement mode power MOSFETs. Lower gate charge is achieved by optimizing the manufacturing process to minimize Ciss and Crss. Lower gate charge coupled with Power MOS VITM optimized gate layout, SLC delivers exceptionally fast sw

 7.3. Size:69K  apt
 apt10086svr.pdf pdf_icon

APT10088HVR

APT10086SVR 1000V 13A 0.860 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement D3PAK mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

MOSTRAR MÁS

Otros transistores... APT10050JVFR, APT10050JVR, APT10050LVFR, APT10050LVR, APT10057WVR, APT10086BVFR, APT10086BVR, APT10086SVR, 20N50, APT10M07JVR, APT10M11B2VR, APT10M11JVR, APT10M11LVR, APT10M19BVFR, APT10M19BVR, APT10M19SVR, APT10M25BVFR