APT10088HVR
MOSFET. Datasheet pdf. Equivalent
Type Designator: APT10088HVR
Type of Transistor: MOSFET
Type of Control Channel: N
-Channel
Pdⓘ
- Maximum Power Dissipation: 250
W
|Vds|ⓘ - Maximum Drain-Source Voltage: 1000
V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30
V
|Id|ⓘ - Maximum Drain Current: 11
A
Tjⓘ - Maximum Junction Temperature: 150
°C
Qgⓘ - Total Gate Charge: 185
nC
trⓘ - Rise Time: 10
nS
Cossⓘ -
Output Capacitance: 350
pF
Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.88
Ohm
Package:
TO258
APT10088HVR
Transistor Equivalent Substitute - MOSFET Cross-Reference Search
APT10088HVR
Datasheet (PDF)
..1. Size:65K apt
apt10088hvr.pdf 
APT10088HVR1000V 11A 0.880POWER MOS VTO-258Power MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe
7.1. Size:68K apt
apt10086bvfr.pdf
APT10086BVFR1000V 13A 0.860POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Te
7.2. Size:34K apt
apt10086blc.pdf
APT10086BLCAPT10086SLC1000V 13A 0.860WBLCTMPOWER MOS VID3PAKPower MOS VITM is a new generation of low gate charge, high voltageTO-247N-Channel enhancement mode power MOSFETs. Lower gate charge isachieved by optimizing the manufacturing process to minimize Ciss and Crss.Lower gate charge coupled with Power MOS VITM optimized gate layout,SLCdelivers exceptionally fast sw
7.3. Size:69K apt
apt10086svr.pdf
APT10086SVR1000V 13A 0.860POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement D3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower
7.4. Size:66K apt
apt10086bvr.pdf
APT10086BVR1000V 13A 0.860POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower
Datasheet: APT10050JVFR
, APT10050JVR
, APT10050LVFR
, APT10050LVR
, APT10057WVR
, APT10086BVFR
, APT10086BVR
, APT10086SVR
, AON6380
, APT10M07JVR
, APT10M11B2VR
, APT10M11JVR
, APT10M11LVR
, APT10M19BVFR
, APT10M19BVR
, APT10M19SVR
, APT10M25BVFR
.
