STD7NS20 MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STD7NS20
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima
disipación de potencia: 45 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 20 V
|Id|ⓘ - Corriente continua
de drenaje: 7 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo
de subida: 15 nS
Cossⓘ - Capacitancia de salida: 90 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.4 Ohm
Encapsulados: DPAK
Búsqueda de reemplazo de STD7NS20 MOSFET
- Selecciónⓘ de transistores por parámetros
STD7NS20 datasheet
..1. Size:319K st
std7ns20 std7ns20-1.pdf 
STD7NS20 STD7NS20-1 N-CHANNEL 200V - 0.35 - 7A DPAK / IPAK MESH OVERLAY MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STD7NS20 200 V
0.1. Size:242K st
std7ns20-1 std7ns20t4.pdf
STD7NS20 STD7NS20-1 N-CHANNEL 200V - 0.35 - 7A DPAK / IPAK MESH OVERLAY MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STD7NS20 200 V
9.1. Size:1059K st
std7n65m2.pdf
STD7N65M2 N-channel 650 V, 0.98 typ., 5 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features RDS(on) Order code VDS max ID TAB STD7N65M2 650 V 1.15 5 A 3 Extremely low gate charge 1 Excellent output capacitance (Coss) profile 100% avalanche tested DPAK Zener-protected Applications Switching applications Figure 1. Inte
9.2. Size:596K st
std7nm60n stf7nm60n stu7nm60n.pdf
STD7NM60N, STF7NM60N, STU7NM60N Datasheet N-channel 600 V, 0.8 typ., 5 A MDmesh II Power MOSFETs in DPAK, TO-220FP and IPAK packages Features VDS RDS(on) max. ID Order code Package STD7NM60N DPAK STF7NM60N 600 V 0.9 5 A TO-220FP STU7NM60N IPAK D(2, TAB) 100% avalanche tested Low input capacitance and gate charge Low gate input resistance G(1) Applications
9.3. Size:924K st
std7n52dk3 stf7n52dk3 stp7n52dk3.pdf
STD7N52DK3 STF7N52DK3, STP7N52DK3 N-channel 525 V, 0.95 , 6 A, DPAK, TO-220FP, TO-220 SuperFREDmesh3 Power MOSFET Features RDS(on) Order codes VDSS max. ID Pw 3 1 STD7N52DK3 6 A 90 W DPAK STF7N52DK3 525 V
9.4. Size:1194K st
stb7n52k3 std7n52k3 stf7n52k3 stp7n52k3.pdf
STB7N52K3, STD7N52K3 STF7N52K3, STP7N52K3 N-channel 525 V, 0.84 , 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET Features RDS(on) Type VDSS ID Pw max 3 3 1 1 STB7N52K3 525 V
9.5. Size:986K st
std7nm64n.pdf
STD7NM64N N-channel 640 V, 5 A, 0.88 typ., MDmesh II Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID STD7NM64N 640 V 1.05 5 A TAB 100% avalanche tested 3 Low input capacitance and gate charge 1 Low gate input resistance DPAK Applications Switching applications Description Figure 1. Internal schematic
9.6. Size:1317K st
stb7n52k3 std7n52k3 stf7n52k3 stp7n52k3 2.pdf
STB7N52K3, STD7N52K3 STF7N52K3, STP7N52K3 N-channel 525 V, 0.72 , 6 A, D PAK, DPAK, TO-220FP, TO-220 SuperMESH3 Power MOSFET Features RDS(on) Order codes VDSS ID Pw max. 3 3 1 1 STB7N52K3 90 W DPAK D PAK STD7N52K3 90 W 525 V
9.7. Size:882K st
std7nm60n stf7nm60n stp7nm60n stu7nm60n.pdf
STD7NM60N, STF7NM60N STP7NM60N, STU7NM60N N-channel 600 V, 5 A, 0.76 , DPAK, TO-220FP, TO-220, IPAK second generation MDmesh Power MOSFET Features VDSS @ RDS(on) Order codes ID 3 TJmax max. 2 3 2 1 1 STD7NM60N TO-220 IPAK STF7NM60N 650 V
9.8. Size:605K st
stp7nk40z stp7nk40zfp std7nk40z std7nk40z-1.pdf
STP7NK40Z - STP7NK40ZFP STD7NK40Z - STD7NK40Z-1 N-CHANNEL 400V-0.85 -5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STP7NK40Z 400 V
9.9. Size:725K st
std7nk30z stf7nk30z stp7nk30z.pdf
STD7NK30Z, STF7NK30Z STP7NK30Z N-channel, 300 V, 0.80 , 5 A TO-220, TO-220FP, DPAK Zener-protected SuperMESH Power MOSFET Features RDS(on) Type VDSS ID Pw max STF7NK30Z 300 V
9.10. Size:723K st
std7nk30z.pdf
STD7NK30Z, STF7NK30Z STP7NK30Z N-channel, 300 V, 0.80 , 5 A TO-220, TO-220FP, DPAK Zener-protected SuperMESH Power MOSFET Features RDS(on) Type VDSS ID Pw max STF7NK30Z 300 V
9.11. Size:431K st
std7nk40z-1 std7nk40zt4 stp7nk40zfp.pdf
STP7NK40Z - STP7NK40ZFP STD7NK40Z - STD7NK40Z-1 N-CHANNEL 400V-0.85 -5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH Power MOSFET TYPE VDSS RDS(on) ID Pw STP7NK40Z 400 V
9.12. Size:969K st
std7nm80 std7nm80-1 stf7nm80 stp7nm80.pdf
STD7NM80, STD7NM80-1 STF7NM80, STP7NM80 N-channel 800 V, 0.95 , 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh Power MOSFET Features Type VDSS RDS(on) ID STD7NM80 800 V
9.13. Size:424K st
std7nm50n std7nm50n-1 stf7nm50n stp7nm50n.pdf
STD7NM50N - STD7NM50N-1 STF7NM50N - STP7NM50N N-channel 500V - 0.70 - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET Features VDSS Type RDS(on) ID 3 (@Tjmax) 2 1 3 STD7NM50N 550V
9.14. Size:488K st
std7nb20.pdf
STD7NB20 STD7NB20-1 N-CHANNEL 200V - 0.3 - 7A DPAK/IPAK PowerMESH MOSFET TYPE VDSS RDS(on) ID STD7NB20 200 V
9.15. Size:583K st
std7n52k3 stp7n52k3.pdf
STD7N52K3, STP7N52K3 Datasheet N-channel 525 V, 0.72 typ., 6 A, MDmesh K3 Power MOSFETs in DPAK and TO-220 packages Features VDS RDS(on) max. ID PTOT Order codes TAB TAB STD7N52K3 525 V 0.85 6 A 90 W 3 2 STP7N52K3 1 3 2 100% avalanche tested DPAK TO-220 1 Extremely high dv/dt capability Very low intrinsic capacitance Improved diode reverse recover
9.16. Size:426K st
std7nm50n-1 std7nm50n stf7nm50n stp7nm50n.pdf
STD7NM50N - STD7NM50N-1 STF7NM50N - STP7NM50N N-channel 500V - 0.70 - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh Power MOSFET Features VDSS Type RDS(on) ID 3 (@Tjmax) 2 1 3 STD7NM50N 550V
9.17. Size:971K st
std7nm80-1 std7nm80 stf7nm80 stp7nm80.pdf
STD7NM80, STD7NM80-1 STF7NM80, STP7NM80 N-channel 800 V, 0.95 , 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh Power MOSFET Features Type VDSS RDS(on) ID STD7NM80 800 V
9.19. Size:634K st
std7nk40zt4 stp7nk40z stp7nk40zfp.pdf
STD7NK40ZT4, STP7NK40Z, STP7NK40ZFP Datasheet N-channel 400 V, 0.85 typ., 5.4 A, SuperMESH Power MOSFETs in DPAK, TO-220 and TO-220FP packages Features TAB 3 2 VDS RDS(on) max. ID PTOT Order code 1 DPAK STD7NK40ZT4 70 W TAB STP7NK40Z 400 V 1 5.4 A 70 W STP7NK40ZFP 25 W 3 3 2 2 1 1 TO-220 TO-220FP Extremely high dv/dt capability 100% avalanche tested D(2,
9.20. Size:1199K st
std7n60m2 stp7n60m2 stu7n60m2.pdf
STD7N60M2, STP7N60M2, STU7N60M2 N-channel 600 V, 0.86 typ., 5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB VDS @ RDS(on) Order codes ID 3 TJmax max 1 STD7N60M2 DPAK STP7N60M2 650 V 0.95 5 A TAB STU7N60M2 TAB Extremely low gate charge 3 3 2 Lower RDS(on) x area vs previous generation 2 1
9.21. Size:244K inchange semiconductor
std7n80k5.pdf
isc N-Channel MOSFET Transistor STD7N80K5 FEATURES Static drain-source on-resistance RDS(on) 1.2 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRITION Switching applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 800 V DSS V Gate-Source Voltage 30 V
Otros transistores... STD70NS04ZL
, STD75N3LLH6
, STD7N52DK3
, STD7N52K3
, STD7NK40Z
, STD7NM60N
, STD7NM80
, STD7NM80-1
, EMB04N03H
, STD85N3LH5
, STD86N3LH5
, STD8N65M5
, STD8NM50N
, STD8NM60N
, STD8NM60ND
, STD90N03L
, STD90N03L-1
.
