All MOSFET. STD7NS20 Datasheet

 

STD7NS20 MOSFET. Datasheet pdf. Equivalent

Type Designator: STD7NS20

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 45 W

Maximum Drain-Source Voltage |Vds|: 200 V

Maximum Drain Current |Id|: 7 A

Total Gate Charge (Qg): 31 nC

Maximum Drain-Source On-State Resistance (Rds): 0.4 Ohm

Package: DPAK

STD7NS20 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STD7NS20 Datasheet (PDF)

0.1. std7ns20 std7ns20-1.pdf Size:319K _st

STD7NS20
STD7NS20

STD7NS20 STD7NS20-1 N-CHANNEL 200V - 0.35Ω - 7A DPAK / IPAK MESH OVERLAY™ MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STD7NS20 200 V < 0.40 Ω 7 A STD7NS20-1 200 V < 0.40 Ω 7 A TYPICAL RDS(on) = 0.35 Ω 3 3 EXTREMELY HIGH dv/dt CAPABILITY 2 1 1 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES ADD SUFFIX “T4” FOR ORDERING IN TAPE & DPAK IPAK REEL TO-252

0.2. std7ns20-1 std7ns20t4.pdf Size:242K _st

STD7NS20
STD7NS20

STD7NS20 STD7NS20-1 N-CHANNEL 200V - 0.35Ω - 7A DPAK / IPAK MESH OVERLAY™ MOSFET PRELIMINARY DATA TYPE VDSS RDS(on) ID STD7NS20 200 V < 0.40 Ω 7 A STD7NS20-1 200 V < 0.40 Ω 7 A TYPICAL RDS(on) = 0.35 Ω 3 3 EXTREMELY HIGH dv/dt CAPABILITY 2 1 1 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES ADD SUFFIX “T4” FOR ORDERING IN TAPE & DPAK IPAK REEL TO-252

 9.1. std7nm60n stf7nm60n stp7nm60n stu7nm60n.pdf Size:882K _st

STD7NS20
STD7NS20

STD7NM60N, STF7NM60N STP7NM60N, STU7NM60N N-channel 600 V, 5 A, 0.76 Ω, DPAK, TO-220FP, TO-220, IPAK second generation MDmesh™ Power MOSFET Features VDSS @ RDS(on) Order codes ID 3 TJmax max. 2 3 2 1 1 STD7NM60N TO-220 IPAK STF7NM60N 650 V < 0.9 Ω 5 A STP7NM60N STU7NM60N 3 ■ 100% avalanche tested 1 3 2 1 ■ Low input capacitance and gate charge DPAK TO-220FP

9.2. std7nb20.pdf Size:488K _st

STD7NS20
STD7NS20

STD7NB20 STD7NB20-1 N-CHANNEL 200V - 0.3Ω - 7A DPAK/IPAK PowerMESH™ MOSFET TYPE VDSS RDS(on) ID STD7NB20 200 V < 0.40 Ω 7 A STD7NB20-1 200 V < 0.40 Ω 7 A 3 TYPICAL RDS(on) = 0.3 Ω 3 2 EXTREMELY HIGH dv/dt CAPABILITY 1 1 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED DPAK IPAK ADD SUFFIX “T4” FOR ORDERING IN TAPE & TO-252 TO-251

 9.3. std7nk40z-1 std7nk40zt4 stp7nk40zfp.pdf Size:431K _st

STD7NS20
STD7NS20

STP7NK40Z - STP7NK40ZFP STD7NK40Z - STD7NK40Z-1 N-CHANNEL 400V-0.85Ω-5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP7NK40Z 400 V < 1 Ω 5.4 A 70 W STP7NK40ZFP 400 V < 1 Ω 5.4 A 25 W STD7NK40Z 400 V < 1 Ω 5.4 A 70 W STD7NK40Z-1 400 V < 1 Ω 5.4 A 70 W 3 TYPICAL RDS(on) = 0.85 Ω 2 1 EXTREMELY HIGH dv/dt CAPABILITY TO-22

9.4. std7n60m2 stp7n60m2 stu7n60m2.pdf Size:1199K _st

STD7NS20
STD7NS20

STD7N60M2, STP7N60M2, STU7N60M2 N-channel 600 V, 0.86 Ω typ., 5 A MDmesh II Plus™ low Qg Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB VDS @ RDS(on) Order codes ID 3 TJmax max 1 STD7N60M2 DPAK STP7N60M2 650 V 0.95 Ω 5 A TAB STU7N60M2 TAB • Extremely low gate charge 3 3 2 • Lower RDS(on) x area vs previous generation 2 1

 9.5. std7nm50n-1 std7nm50n stf7nm50n stp7nm50n.pdf Size:426K _st

STD7NS20
STD7NS20

STD7NM50N - STD7NM50N-1 STF7NM50N - STP7NM50N N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET Features VDSS Type RDS(on) ID 3 (@Tjmax) 2 1 3 STD7NM50N 550V <0.78Ω 5A 2 IPAK 1 STD7NM50N-1 550V <0.78Ω 5A TO-220 STF7NM50N 550V <0.78Ω 5A (1) STP7NM50N 550V <0.78Ω 5A 3 1. Limited only by maximum temperature allowe

9.6. std7nk30z stf7nk30z stp7nk30z.pdf Size:725K _st

STD7NS20
STD7NS20

STD7NK30Z, STF7NK30Z STP7NK30Z N-channel, 300 V, 0.80 Ω, 5 A TO-220, TO-220FP, DPAK Zener-protected SuperMESH™ Power MOSFET Features RDS(on) Type VDSS ID Pw max STF7NK30Z 300 V < 0.9 Ω 5 A 20 W 3 2 STP7NK30Z 300 V < 0.9 Ω 5 A 50 W 3 1 2 1 TO-220 STD7NK30Z 300 V < 0.9 Ω 5 A 50 W TO-220FP ■ 100% avalanche tested 3 ■ Extremely high dv/dt capability 1 ■ Gate c

9.7. stb7n52k3 std7n52k3 stf7n52k3 stp7n52k3.pdf Size:1194K _st

STD7NS20
STD7NS20

STB7N52K3, STD7N52K3 STF7N52K3, STP7N52K3 N-channel 525 V, 0.84 Ω, 6.2 A, D2PAK, DPAK, TO-220FP, TO-220 SuperMESH3™ Power MOSFET Features RDS(on) Type VDSS ID Pw max 3 3 1 1 STB7N52K3 525 V < 0.98 Ω 6.2 A 90 W DPAK D²PAK STD7N52K3 525 V < 0.98 Ω 6.2 A 90 W STF7N52K3 525 V < 0.98 Ω 6.2 A (1) 25 W STP7N52K3 525 V < 0.98 Ω 6.2 A 90 W 1. Limited by package 3 ■ 100

9.8. std7n52dk3 stf7n52dk3 stp7n52dk3.pdf Size:924K _st

STD7NS20
STD7NS20

STD7N52DK3 STF7N52DK3, STP7N52DK3 N-channel 525 V, 0.95 Ω, 6 A, DPAK, TO-220FP, TO-220 SuperFREDmesh3™ Power MOSFET Features RDS(on) Order codes VDSS max. ID Pw 3 1 STD7N52DK3 6 A 90 W DPAK STF7N52DK3 525 V < 1.15 Ω 6 A (1) 25 W STP7N52DK3 6 A 90 W 1. Limited by package ■ 100% avalanche tested 3 3 2 ■ Extremely high dv/dt capability 2 1 1 ■ Gate charge minimized

9.9. std7n65m2.pdf Size:1059K _st

STD7NS20
STD7NS20

STD7N65M2 N-channel 650 V, 0.98 Ω typ., 5 A MDmesh™ M2 Power MOSFET in a DPAK package Datasheet - production data Features RDS(on) Order code VDS max ID TAB STD7N65M2 650 V 1.15 Ω 5 A 3 • Extremely low gate charge 1 • Excellent output capacitance (Coss) profile • 100% avalanche tested DPAK • Zener-protected Applications • Switching applications Figure 1. Inte

9.10. std7nm64n.pdf Size:986K _st

STD7NS20
STD7NS20

STD7NM64N N-channel 640 V, 5 A, 0.88 Ω typ., MDmesh™ II Power MOSFET in a DPAK package Datasheet - production data Features Order code VDS RDS(on) max. ID STD7NM64N 640 V 1.05 Ω 5 A TAB • 100% avalanche tested 3 • Low input capacitance and gate charge 1 • Low gate input resistance DPAK Applications • Switching applications Description Figure 1. Internal schematic

9.11. std7nk30z.pdf Size:723K _st

STD7NS20
STD7NS20

STD7NK30Z, STF7NK30Z STP7NK30Z N-channel, 300 V, 0.80 Ω, 5 A TO-220, TO-220FP, DPAK Zener-protected SuperMESH™ Power MOSFET Features RDS(on) Type VDSS ID Pw max STF7NK30Z 300 V < 0.9 Ω 5 A 20 W 3 2 STP7NK30Z 300 V < 0.9 Ω 5 A 50 W 3 1 2 1 TO-220 STD7NK30Z 300 V < 0.9 Ω 5 A 50 W TO-220FP ■ 100% avalanche tested 3 ■ Extremely high dv/dt capability 1 ■ Gate c

9.12. stp7nk40z stp7nk40zfp std7nk40z std7nk40z-1.pdf Size:605K _st

STD7NS20
STD7NS20

STP7NK40Z - STP7NK40ZFP STD7NK40Z - STD7NK40Z-1 N-CHANNEL 400V-0.85Ω-5.4A TO-220/TO-220FP/DPAK/IPAK Zener-Protected SuperMESH™Power MOSFET TYPE VDSS RDS(on) ID Pw STP7NK40Z 400 V < 1 Ω 5.4 A 70 W STP7NK40ZFP 400 V < 1 Ω 5.4 A 25 W STD7NK40Z 400 V < 1 Ω 5.4 A 70 W STD7NK40Z-1 400 V < 1 Ω 5.4 A 70 W 3 TYPICAL RDS(on) = 0.85 Ω 2 1 EXTREMELY HIGH dv/dt CAPABILITY TO-22

9.13. std7nm80-1 std7nm80 stf7nm80 stp7nm80.pdf Size:971K _st

STD7NS20
STD7NS20

STD7NM80, STD7NM80-1 STF7NM80, STP7NM80 N-channel 800 V, 0.95 Ω, 6.5 A TO-220, TO-220FP, IPAK, DPAK MDmesh™ Power MOSFET Features Type VDSS RDS(on) ID STD7NM80 800 V < 1.05 Ω 6.5 A 3 3 2 2 1 1 STD7NM80-1 800 V < 1.05 Ω 6.5 A TO-220FP TO-220 STF7NM80 800 V < 1.05 Ω 6.5 A STP7NM80 800 V < 1.05 Ω 6.5 A ■ 100% avalanche tested 3 3 ■ Low input capacitance and gat

9.14. stb7n52k3 std7n52k3 stf7n52k3 stp7n52k3 2.pdf Size:1317K _st

STD7NS20
STD7NS20

STB7N52K3, STD7N52K3 STF7N52K3, STP7N52K3 N-channel 525 V, 0.72 Ω, 6 A, D²PAK, DPAK, TO-220FP, TO-220 SuperMESH3™ Power MOSFET Features RDS(on) Order codes VDSS ID Pw max. 3 3 1 1 STB7N52K3 90 W DPAK D²PAK STD7N52K3 90 W 525 V < 0.85 Ω 6 A STF7N52K3 25 W STP7N52K3 90 W ■ 100% avalanche tested 3 3 2 ■ Extremely high dv/dt capability 2 1 1 ■ Gate charge min

9.15. std7nm50n std7nm50n-1 stf7nm50n stp7nm50n.pdf Size:424K _st

STD7NS20
STD7NS20

STD7NM50N - STD7NM50N-1 STF7NM50N - STP7NM50N N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET Features VDSS Type RDS(on) ID 3 (@Tjmax) 2 1 3 STD7NM50N 550V <0.78Ω 5A 2 IPAK 1 STD7NM50N-1 550V <0.78Ω 5A TO-220 STF7NM50N 550V <0.78Ω 5A (1) STP7NM50N 550V <0.78Ω 5A 3 1. Limited only by maximum temperature allowe

9.16. std7n80k5 stp7n80k5 stu7n80k5.pdf Size:995K _st

STD7NS20
STD7NS20

STD7N80K5, STP7N80K5, STU7N80K5 N-channel 800 V, 0.95 Ω typ., 6 A Zener-protected SuperMESH™ 5 Power MOSFETs in DPAK, TO-220 and IPAK packages Datasheet - production data Features TAB Order codes VDS RDS(on)max ID PTOT 2 3 1 STD7N80K5 DPAK STP7N80K5 800 V 1.2 Ω 6 A 110 W TAB STU7N80K5 TAB • Worldwide best FOM (figure of merit) 3 • Ultra low gate charge 2 3 1 2

9.17. std7n80k5.pdf Size:244K _inchange_semiconductor

STD7NS20
STD7NS20

isc N-Channel MOSFET Transistor STD7N80K5 ·FEATURES ·Static drain-source on-resistance: RDS(on)≤1.2Ω ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation ·DESCRITION ·Switching applications ·ABSOLUTE MAXIMUM RATINGS(T =25℃) a SYMBOL PARAMETER VALUE UNIT V Drain-Source Voltage 800 V DSS V Gate-Source Voltage ±30 V

Datasheet: IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , J310 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .

 

 
Back to Top