APT10M11JVR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT10M11JVR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 450 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 144 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 48 nS

Cossⓘ - Capacitancia de salida: 3200 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.011 Ohm

Encapsulados: SOT227

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APT10M11JVR datasheet

 ..1. Size:70K  apt
 apt10m11jvr.pdf pdf_icon

APT10M11JVR

APT10M11JVR 100V 144A 0.011 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche

 4.1. Size:118K  apt
 apt10m11jvfr.pdf pdf_icon

APT10M11JVR

APT10M11JVFR 100V 144A 0.011 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switchi

 6.1. Size:63K  apt
 apt10m11b2vr.pdf pdf_icon

APT10M11JVR

APT10M11B2VR 100V 100A 0.011 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D L

 6.2. Size:64K  apt
 apt10m11b2vfrg apt10m11lvfrg.pdf pdf_icon

APT10M11JVR

APT10M11B2VFR APT10M11LVFR 100V 100A 0.011W B2VFR POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. LVFR Identical

MOSTRAR MÁS

Otros transistores... APT10050LVR, APT10057WVR, APT10086BVFR, APT10086BVR, APT10086SVR, APT10088HVR, APT10M07JVR, APT10M11B2VR, STF13NM60N, APT10M11LVR, APT10M19BVFR, APT10M19BVR, APT10M19SVR, APT10M25BVFR, APT10M25BVR, APT10M25SVR, APT1201R5BVR