Справочник MOSFET. APT10M11JVR

 

APT10M11JVR Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: APT10M11JVR
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 450 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 144 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 48 ns
   Cossⓘ - Выходная емкость: 3200 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.011 Ohm
   Тип корпуса: SOT227
     - подбор MOSFET транзистора по параметрам

 

APT10M11JVR Datasheet (PDF)

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 apt10m11jvr.pdf pdf_icon

APT10M11JVR

APT10M11JVR100V 144A 0.011POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

 4.1. Size:118K  apt
 apt10m11jvfr.pdf pdf_icon

APT10M11JVR

APT10M11JVFR100V 144A 0.011POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switchi

 6.1. Size:63K  apt
 apt10m11b2vr.pdf pdf_icon

APT10M11JVR

APT10M11B2VR100V 100A 0.011POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D L

 6.2. Size:64K  apt
 apt10m11b2vfrg apt10m11lvfrg.pdf pdf_icon

APT10M11JVR

APT10M11B2VFRAPT10M11LVFR100V 100A 0.011WB2VFRPOWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.LVFR Identical

ПОКАЗАТЬ ЕЩЁ

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History: NCE65N520I | TPB65R120M | IXTH10N100D2 | HYG060N08NS1D | DMJ70H601SV3 | SI2302A | 2N6968JANTXV

 

 
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