APT10M19SVR Todos los transistores

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APT10M19SVR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT10M19SVR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 370 W

Tensión drenaje-fuente (Vds): 100 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 75 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tiempo de elevación (tr): 40 nS

Conductancia de drenaje-sustrato (Cd): 1900 pF

Resistencia drenaje-fuente RDS(on): 0.019 Ohm

Empaquetado / Estuche: D3PAK

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APT10M19SVR Datasheet (PDF)

1.1. apt10m19svr.pdf Size:70K _apt

APT10M19SVR
APT10M19SVR

APT10M19SVR 100V 75A 0.019Ω POWER MOS V® D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

2.1. apt10m19.pdf Size:112K _apt

APT10M19SVR
APT10M19SVR

APT10M19BVFR APT10M19SVFR Ω 100V 75A 0.019Ω Ω Ω Ω BVFR POWER MOS V® FREDFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SV

2.2. apt10m19bvr.pdf Size:67K _apt

APT10M19SVR
APT10M19SVR

APT10M19BVR 100V 75A 0.019Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower

2.3. apt10m19bvfr.pdf Size:74K _apt

APT10M19SVR
APT10M19SVR

APT10M19BVFR 100V 75A 0.019Ω POWER MOS V® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avala

Otros transistores... APT10086SVR , APT10088HVR , APT10M07JVR , APT10M11B2VR , APT10M11JVR , APT10M11LVR , APT10M19BVFR , APT10M19BVR , IRLR2905 , APT10M25BVFR , APT10M25BVR , APT10M25SVR , APT1201R5BVR , APT1201R6BVR , APT12040JVR , APT12080JVR , APT12080LVR .

 


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Introduzca al menos 1 números o letras