APT10M19SVR - Даташиты. Аналоги. Основные параметры
Наименование производителя: APT10M19SVR
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 370 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 100 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 75 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 40 ns
Cossⓘ - Выходная емкость: 1900 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.019 Ohm
Тип корпуса: D3PAK
Аналог (замена) для APT10M19SVR
APT10M19SVR Datasheet (PDF)
apt10m19svr.pdf

APT10M19SVR100V 75A 0.019POWER MOS VD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower
apt10m19bvfrg apt10m19svfr apt10m19svfrg.pdf

APT10M19BVFRAPT10M19SVFR100V 75A 0.019BVFR POWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementTO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.SV
apt10m19bvr.pdf

APT10M19BVR100V 75A 0.019POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower
apt10m19bvrg.pdf

APT10M19BVR100V 75A 0.019POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower
Другие MOSFET... APT10086SVR , APT10088HVR , APT10M07JVR , APT10M11B2VR , APT10M11JVR , APT10M11LVR , APT10M19BVFR , APT10M19BVR , MMIS60R580P , APT10M25BVFR , APT10M25BVR , APT10M25SVR , APT1201R5BVR , APT1201R6BVR , APT12040JVR , APT12080JVR , APT12080LVR .
History: IXTQ150N15P | JMH65R360MF | NTTFS4930NTAG | P0260EIS
History: IXTQ150N15P | JMH65R360MF | NTTFS4930NTAG | P0260EIS



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