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APT10M19SVR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: APT10M19SVR

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 370 W

Предельно допустимое напряжение сток-исток (Uds): 100 V

Предельно допустимое напряжение затвор-исток (Ugs): 30 V

Максимально допустимый постоянный ток стока (Id): 75 A

Максимальная температура канала (Tj): 150 °C

Время нарастания (tr): 40 ns

Выходная емкость (Cd): 1900 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.019 Ohm

Тип корпуса: D3PAK

Аналог (замена) для APT10M19SVR

 

 

APT10M19SVR Datasheet (PDF)

1.1. apt10m19bvfrg apt10m19svfr apt10m19svfrg.pdf Size:117K _apt

APT10M19SVR
APT10M19SVR

APT10M19BVFR APT10M19SVFR Ω 100V 75A 0.019Ω Ω Ω Ω BVFR POWER MOS V® FREDFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SV

1.2. apt10m19svr.pdf Size:70K _apt

APT10M19SVR
APT10M19SVR

APT10M19SVR 100V 75A 0.019Ω POWER MOS V® D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

 2.1. apt10m19.pdf Size:112K _apt

APT10M19SVR
APT10M19SVR

APT10M19BVFR APT10M19SVFR Ω 100V 75A 0.019Ω Ω Ω Ω BVFR POWER MOS V® FREDFET D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. SV

2.2. apt10m19bvfr.pdf Size:74K _apt

APT10M19SVR
APT10M19SVR

APT10M19BVFR 100V 75A 0.019Ω POWER MOS V® FREDFET TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avala

 2.3. apt10m19bvrg.pdf Size:47K _apt

APT10M19SVR
APT10M19SVR

APT10M19BVR 100V 75A 0.019Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower

2.4. apt10m19bvr.pdf Size:67K _apt

APT10M19SVR
APT10M19SVR

APT10M19BVR 100V 75A 0.019Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Faster Switching • 100% Avalanche Tested D • Lower

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