APT10M25BVFR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT10M25BVFR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 100 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 75 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 22 nS

Cossⓘ - Capacitancia de salida: 1600 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.025 Ohm

Encapsulados: TO247

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APT10M25BVFR datasheet

 ..1. Size:69K  apt
 apt10m25bvfr.pdf pdf_icon

APT10M25BVFR

APT10M25BVFR 100V 75A 0.025 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 4.1. Size:65K  apt
 apt10m25bvr.pdf pdf_icon

APT10M25BVFR

APT10M25BVR 100V 75A 0.025 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

 4.2. Size:375K  inchange semiconductor
 apt10m25bvr.pdf pdf_icon

APT10M25BVFR

isc N-Channel MOSFET Transistor APT10M25BVR FEATURES Drain Current I =75A@ T =25 D C Drain Source Voltage- V =100V(Min) DSS Static Drain-Source On-Resistance R =0.025 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

 6.1. Size:68K  apt
 apt10m25svr.pdf pdf_icon

APT10M25BVFR

APT10M25SVR 100V 75A 0.025 POWER MOS V D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. D Faster Switching 100% Avalanche Tested Lower

MOSTRAR MÁS

Otros transistores... APT10088HVR, APT10M07JVR, APT10M11B2VR, APT10M11JVR, APT10M11LVR, APT10M19BVFR, APT10M19BVR, APT10M19SVR, 75N75, APT10M25BVR, APT10M25SVR, APT1201R5BVR, APT1201R6BVR, APT12040JVR, APT12080JVR, APT12080LVR, APT20M11JVFR