All MOSFET. APT10M25BVFR Datasheet

 

APT10M25BVFR MOSFET. Datasheet pdf. Equivalent


   Type Designator: APT10M25BVFR
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 300 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 100 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
   |Id|ⓘ - Maximum Drain Current: 75 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 150 nC
   trⓘ - Rise Time: 22 nS
   Cossⓘ - Output Capacitance: 1600 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.025 Ohm
   Package: TO247

 APT10M25BVFR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT10M25BVFR Datasheet (PDF)

 ..1. Size:69K  apt
 apt10m25bvfr.pdf

APT10M25BVFR APT10M25BVFR

APT10M25BVFR100V 75A 0.025POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 4.1. Size:65K  apt
 apt10m25bvr.pdf

APT10M25BVFR APT10M25BVFR

APT10M25BVR100V 75A 0.025POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

 4.2. Size:375K  inchange semiconductor
 apt10m25bvr.pdf

APT10M25BVFR APT10M25BVFR

isc N-Channel MOSFET Transistor APT10M25BVRFEATURESDrain Current I =75A@ T =25D CDrain Source Voltage-: V =100V(Min)DSSStatic Drain-Source On-Resistance: R =0.025(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 6.1. Size:68K  apt
 apt10m25svr.pdf

APT10M25BVFR APT10M25BVFR

APT10M25SVR100V 75A 0.025POWER MOS VD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

 6.2. Size:69K  apt
 apt10m25.pdf

APT10M25BVFR APT10M25BVFR

APT10M25BVFR100V 75A 0.025POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

Datasheet: APT10088HVR , APT10M07JVR , APT10M11B2VR , APT10M11JVR , APT10M11LVR , APT10M19BVFR , APT10M19BVR , APT10M19SVR , IRFZ48N , APT10M25BVR , APT10M25SVR , APT1201R5BVR , APT1201R6BVR , APT12040JVR , APT12080JVR , APT12080LVR , APT20M11JVFR .

 

 
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