All MOSFET. APT10M25BVFR Datasheet

 

APT10M25BVFR MOSFET. Datasheet pdf. Equivalent

Type Designator: APT10M25BVFR

Type of Transistor: MOSFET

Type of Control Channel: N -Channel

Maximum Power Dissipation (Pd): 300 W

Maximum Drain-Source Voltage |Vds|: 100 V

Maximum Gate-Source Voltage |Vgs|: 30 V

Maximum Drain Current |Id|: 75 A

Maximum Junction Temperature (Tj): 150 °C

Rise Time (tr): 22 nS

Drain-Source Capacitance (Cd): 1600 pF

Maximum Drain-Source On-State Resistance (Rds): 0.025 Ohm

Package: TO247

APT10M25BVFR Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

APT10M25BVFR Datasheet (PDF)

1.1. apt10m25bvr.pdf Size:65K _apt

APT10M25BVFR
APT10M25BVFR

APT10M25BVR 100V 75A 0.025Ω POWER MOS V® Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

1.2. apt10m25bvfr.pdf Size:69K _apt

APT10M25BVFR
APT10M25BVFR

APT10M25BVFR 100V 75A 0.025Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Tes

 2.1. apt10m25.pdf Size:69K _apt

APT10M25BVFR
APT10M25BVFR

APT10M25BVFR 100V 75A 0.025Ω POWER MOS V® FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. • Fast Recovery Body Diode • 100% Avalanche Tes

2.2. apt10m25svr.pdf Size:68K _apt

APT10M25BVFR
APT10M25BVFR

APT10M25SVR 100V 75A 0.025Ω POWER MOS V® D3PAK Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V® also achieves faster switching speeds through optimized gate layout. D • Faster Switching • 100% Avalanche Tested • Lower

Datasheet: APT10088HVR , APT10M07JVR , APT10M11B2VR , APT10M11JVR , APT10M11LVR , APT10M19BVFR , APT10M19BVR , APT10M19SVR , IRFP150N , APT10M25BVR , APT10M25SVR , APT1201R5BVR , APT1201R6BVR , APT12040JVR , APT12080JVR , APT12080LVR , APT20M11JVFR .

 

 
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