APT12080LVR MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT12080LVR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 520 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 1200 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 16 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 12 nS
Cossⓘ - Capacitancia de salida: 530 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.8 Ohm
Paquete / Cubierta: TO264
- Selección de transistores por parámetros
APT12080LVR Datasheet (PDF)
apt12080lvr.pdf

APT12080LVR1200V 16A 0.800POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe
apt12080b2vfrg apt12080lvfrg.pdf

APT12080B2VFRAPT12080LVFR1200V 16A 0.800POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementT-MAXTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.
apt12080jvfr.pdf

APT12080JVFR1200V 15A 0.800POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS V"UL Recognized"ISOTOPalso achieves faster switching speeds through optimized gate layout.D Faster Swit
apt12080b2vfr.pdf

APT12080B2VFRAPT12080LVFR1200V 16A 0.800POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementT-MAXTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.
Otros transistores... APT10M19SVR , APT10M25BVFR , APT10M25BVR , APT10M25SVR , APT1201R5BVR , APT1201R6BVR , APT12040JVR , APT12080JVR , 2SK3918 , APT20M11JVFR , APT20M11JVR , APT20M13PVR , APT20M19JVR , APT20M22B2VFR , APT20M22B2VR , APT20M22JVFR , APT20M22JVR .
History: IPB60R190C6 | FCH20N60 | DMN6075S | NCE65N260F | VBZE50P03
History: IPB60R190C6 | FCH20N60 | DMN6075S | NCE65N260F | VBZE50P03



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