APT12080LVR Specs and Replacement

Type Designator: APT12080LVR

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 520 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 1200 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V

|Id| ⓘ - Maximum Drain Current: 16 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 12 nS

Cossⓘ - Output Capacitance: 530 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.8 Ohm

Package: TO264

APT12080LVR substitution

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APT12080LVR datasheet

 ..1. Size:61K  apt
 apt12080lvr.pdf pdf_icon

APT12080LVR

APT12080LVR 1200V 16A 0.800 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lowe... See More ⇒

 4.1. Size:118K  apt
 apt12080b2vfrg apt12080lvfrg.pdf pdf_icon

APT12080LVR

APT12080B2VFR APT12080LVFR 1200V 16A 0.800 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement T-MAX TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. ... See More ⇒

 6.1. Size:112K  apt
 apt12080jvfr.pdf pdf_icon

APT12080LVR

APT12080JVFR 1200V 15A 0.800 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V "UL Recognized" ISOTOP also achieves faster switching speeds through optimized gate layout. D Faster Swit... See More ⇒

 6.2. Size:111K  apt
 apt12080b2vfr.pdf pdf_icon

APT12080LVR

APT12080B2VFR APT12080LVFR 1200V 16A 0.800 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement T-MAX TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. ... See More ⇒

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Detailed specifications: APT10M19SVR, APT10M25BVFR, APT10M25BVR, APT10M25SVR, APT1201R5BVR, APT1201R6BVR, APT12040JVR, APT12080JVR, IRFZ46N, APT20M11JVFR, APT20M11JVR, APT20M13PVR, APT20M19JVR, APT20M22B2VFR, APT20M22B2VR, APT20M22JVFR, APT20M22JVR

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