STL10N3LLH5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: STL10N3LLH5
   Código: 10N3L
   Tipo de FET: MOSFET
   Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

   Pdⓘ - Máxima disipación de potencia: 2 W
   |Vds|ⓘ - Voltaje máximo drenador - fuente: 30 V
   |Vgs|ⓘ - Voltaje máximo fuente - puerta: 22 V
   |Id|ⓘ - Corriente continua de drenaje: 9 A
   Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   |Vgs(th)|ⓘ - Tensión umbral entre puerta y fuente: 2.5 V
   Qgⓘ - Carga de la puerta: 5 nC
   trⓘ - Tiempo de subida: 4.2 nS
   Cossⓘ - Capacitancia de salida: 132 pF
   Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.019 Ohm
   Paquete / Cubierta: POWERFLAT3.3X3.3

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STL10N3LLH5 Datasheet (PDF)

..1. Size:700K st
stl10n3llh5.pdf

STL10N3LLH5N-channel 30 V, 0.015 , 9 A, PowerFLAT 3.3x3.3STripFET V Power MOSFETFeaturesRDS(on) Order code VDSS IDmaxSTL10N3LLH5 30 V

8.1. Size:1020K st
stl10n60m2.pdf

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8.2. Size:771K st
stl10n65m2.pdf

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stl105ns3llh7.pdf

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9.3. Size:770K st
stl100n1vh5.pdf

STL100N1VH5N-channel 12 V, 0.0022 , 25 A PowerFLAT (5x6)STripFET V Power MOSFETFeaturesRDS(on) Order code VDSS IDmax.STL100N1VH5 12 V

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stl100n10f7.pdf

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stl100n6lf6.pdf

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9.6. Size:377K st
stl100nh3ll.pdf