STL11N3LLH6 Todos los transistores

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 stl11n3llh6.pdf

STL11N3LLH6 N-channel 30 V, 0.006 , 11 A PowerFLAT (3.3 x 3.3) STripFET VI DeepGATE Power MOSFET Features RDS(on) Order code VDSS ID max. STL11N3LLH6 30 V 0.0075 11 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark PowerFLAT (3.3 x 3.3) Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power

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 stl11n65m5.pdf

STL11N65M5 N-channel 650 V, 0.475 typ., 8.5 A MDmesh M5 Power MOSFET in a PowerFLAT 5x5 package Datasheet - production data Features Order code VDS @ Tj max. RDS(on) max ID 6 7 STL11N65M5 710 V 0.530 8.5 A 5 Extremely low RDS(on) 4 Low gate charge and input capacitance Excellent switching performance 1 12 TM 100% avalanche tested PowerFLAT 5x5

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 stl11n4llf5.pdf

STL11N4LLF5 N-channel 40 V, 9.1 m typ., 15 A STripFET V Power MOSFET in a PowerFLAT 3.3 x 3.3 package Datasheet - production data Features Order code VDS RDS(on) max ID STL11N4LLF5 40 V 9.7 m 15 A Low gate charge Very low on-resistance PowerFLAT 3.3x3.3 High avalance ruggedeness Applications Switching applications Description Figure 1. Internal schemat

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 stl110n10f7.pdf

STL110N10F7 N-channel 100 V, 0.005 typ., 107 A, STripFET H7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max ID PTOT 0.006 STL110N10F7 100 V 107 A 136 W (VGS= 10 V) 1 2 Among the lowest RDS(on) on the market 3 4 Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche

 9.2. Size:695K  st
 stl110ns3llh7.pdf

STL110NS3LLH7 N-channel 30 V, 0.0027 typ., 120 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6 Datasheet - production data Features Order code VDS RDS(on) max ID STL110NS3LLH7 30 V 0.0034 120 A Very low on-resistance 1 Very low Qg 2 3 4 High avalanche ruggedness Embedded Schottky diode PowerFLAT 5x6 Applications Switchin