All MOSFET. STL11N3LLH6 Datasheet

 

STL11N3LLH6 MOSFET. Datasheet pdf. Equivalent


   Type Designator: STL11N3LLH6
   Marking Code: 11N3L
   Type of Transistor: MOSFET
   Type of Control Channel: N -Channel
   Pdⓘ - Maximum Power Dissipation: 2 W
   |Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
   |Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
   |Vgs(th)|ⓘ - Maximum Gate-Threshold Voltage: 1(min) V
   |Id|ⓘ - Maximum Drain Current: 11 A
   Tjⓘ - Maximum Junction Temperature: 150 °C
   Qgⓘ - Total Gate Charge: 17 nC
   Cossⓘ - Output Capacitance: 290 pF
   Rdsⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
   Package: POWERFLAT3.3X3.3

 STL11N3LLH6 Transistor Equivalent Substitute - MOSFET Cross-Reference Search

 

STL11N3LLH6 Datasheet (PDF)

 ..1. Size:489K  st
 stl11n3llh6.pdf

STL11N3LLH6 STL11N3LLH6

STL11N3LLH6N-channel 30 V, 0.006 , 11 A PowerFLAT (3.3 x 3.3)STripFET VI DeepGATE Power MOSFETFeaturesRDS(on) Order code VDSS IDmax.STL11N3LLH6 30 V 0.0075 11 A (1)1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmarkPowerFLAT (3.3 x 3.3) Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power

 8.1. Size:1036K  st
 stl11n65m5.pdf

STL11N3LLH6 STL11N3LLH6

STL11N65M5N-channel 650 V, 0.475 typ., 8.5 A MDmesh M5 Power MOSFET in a PowerFLAT 5x5 package Datasheet - production dataFeaturesOrder code VDS @ Tj max. RDS(on) max ID67STL11N65M5 710 V 0.530 8.5 A5 Extremely low RDS(on) 4 Low gate charge and input capacitance Excellent switching performance 112TM 100% avalanche testedPowerFLAT 5x5

 8.2. Size:1174K  st
 stl11n4llf5.pdf

STL11N3LLH6 STL11N3LLH6

STL11N4LLF5N-channel 40 V, 9.1 m typ., 15 A STripFETV Power MOSFET in a PowerFLAT 3.3 x 3.3 packageDatasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTL11N4LLF5 40 V 9.7 m 15 A Low gate charge Very low on-resistancePowerFLAT 3.3x3.3 High avalance ruggedenessApplications Switching applicationsDescriptionFigure 1. Internal schemat

 9.1. Size:1029K  st
 stl110n10f7.pdf

STL11N3LLH6 STL11N3LLH6

STL110N10F7N-channel 100 V, 0.005 typ., 107 A, STripFET H7 Power MOSFET in a PowerFLAT 5x6 packageDatasheet - production dataFeatures Order code VDS RDS(on) max ID PTOT0.006 STL110N10F7 100 V 107 A 136 W(VGS= 10 V)12 Among the lowest RDS(on) on the market34 Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche

 9.2. Size:695K  st
 stl110ns3llh7.pdf

STL11N3LLH6 STL11N3LLH6

STL110NS3LLH7N-channel 30 V, 0.0027 typ., 120 A STripFET H7 Power MOSFET plus monolithic Schottky in a PowerFLAT 5x6Datasheet - production dataFeaturesOrder code VDS RDS(on) max IDSTL110NS3LLH7 30 V 0.0034 120 A Very low on-resistance1 Very low Qg234 High avalanche ruggedness Embedded Schottky diodePowerFLAT5x6Applications Switchin

Datasheet: WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .

History: IXFH96N15P

 

 
Back to Top