STL11N3LLH6 Specs and Replacement
Type Designator: STL11N3LLH6
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 2 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 11 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
Cossⓘ - Output Capacitance: 290 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0075 Ohm
Package: POWERFLAT3.3X3.3
STL11N3LLH6 substitution
- MOSFET ⓘ Cross-Reference Search
STL11N3LLH6 datasheet
stl11n3llh6.pdf
STL11N3LLH6 N-channel 30 V, 0.006 , 11 A PowerFLAT (3.3 x 3.3) STripFET VI DeepGATE Power MOSFET Features RDS(on) Order code VDSS ID max. STL11N3LLH6 30 V 0.0075 11 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark PowerFLAT (3.3 x 3.3) Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power... See More ⇒
stl11n65m5.pdf
STL11N65M5 N-channel 650 V, 0.475 typ., 8.5 A MDmesh M5 Power MOSFET in a PowerFLAT 5x5 package Datasheet - production data Features Order code VDS @ Tj max. RDS(on) max ID 6 7 STL11N65M5 710 V 0.530 8.5 A 5 Extremely low RDS(on) 4 Low gate charge and input capacitance Excellent switching performance 1 12 TM 100% avalanche tested PowerFLAT 5x5... See More ⇒
stl11n4llf5.pdf
STL11N4LLF5 N-channel 40 V, 9.1 m typ., 15 A STripFET V Power MOSFET in a PowerFLAT 3.3 x 3.3 package Datasheet - production data Features Order code VDS RDS(on) max ID STL11N4LLF5 40 V 9.7 m 15 A Low gate charge Very low on-resistance PowerFLAT 3.3x3.3 High avalance ruggedeness Applications Switching applications Description Figure 1. Internal schemat... See More ⇒
stl110n10f7.pdf
STL110N10F7 N-channel 100 V, 0.005 typ., 107 A, STripFET H7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code VDS RDS(on) max ID PTOT 0.006 STL110N10F7 100 V 107 A 136 W (VGS= 10 V) 1 2 Among the lowest RDS(on) on the market 3 4 Excellent figure of merit (FoM) Low Crss/Ciss ratio for EMI immunity High avalanche... See More ⇒
Detailed specifications: STI4N62K3, STI55NF03L, STI6N62K3, STI70N10F4, STI8N65M5, STL100N1VH5, STL100N6LF6, STL10N3LLH5, NCEP15T14, STL12N65M5, STL13NM60N, STL140N4LLF5, STL150N3LLH5, STL150N3LLH6, STL15DN4F5, STL15N3LLH5, STL160N3LLH6
Keywords - STL11N3LLH6 MOSFET specs
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