STL150N3LLH6 Todos los transistores

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STL150N3LLH6 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STL150N3LLH6

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 80 W

Tensión drenaje-fuente (Vds): 30 V

Tensión compuerta-fuente (Vgs): 20 V

Tensión umbral compuerta-fuente Vgs(th): 1 V

Corriente continua de drenaje (Id): 150 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Resistencia drenaje-fuente RDS(on): 0.002 Ohm

Empaquetado / Estuche: PowerFLAT_5X6

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STL150N3LLH6 Datasheet (PDF)

1.1. stl150n3llh5.pdf Size:522K _st

STL150N3LLH6
STL150N3LLH6

STL150N3LLH5 N-channel 30 V, 0.0014 ?, 35 A, PowerFLAT (6x5) STripFET V Power MOSFET Features RDS(on) Type VDSS ID max STL150N3LLH5 30 V <0.00175 ? 35 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) PowerFLAT ( 6x5 ) High avalanche ruggedness Low gate drive power losses Application Switching application

1.2. stl150n3llh6.pdf Size:829K _st

STL150N3LLH6
STL150N3LLH6

STL150N3LLH6 N-channel 30 V, 0.0016 ?, 33 A PowerFLAT (6x5) STripFET VI DeepGATE Power MOSFET Features RDS(on) Type VDSS ID max STL150N3LLH6 30 V 0.0024 ? 33 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark PowerFLAT ( 6x5 ) Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses Very low switching gate ch

 5.1. 2stl1525.pdf Size:141K _update

STL150N3LLH6
STL150N3LLH6

2STL1525 Low voltage high performance NPN power transistor Features ■ Very low collector-emitter saturation voltage ■ High current gain characteristic ■ Fast switching speed Applications ■ Emergency lighting ■ LED drive TO-92MOD TO-92MOD-AP ■ Motherboard and hard disk drive ■ Mobile equipment ■ DC-DC converter, voltage regulation Figure 1. Internal schematic diagra

5.2. 2stl1525.pdf Size:130K _st

STL150N3LLH6
STL150N3LLH6

2STL1525 Low voltage high performance NPN power transistor Preliminary data Features Very low collector-emitter saturation voltage High current gain characteristic Fast switching speed Applications Emergency lighting TO-92L LED Motherboard and hard disk drive Mobile equipment Battery charger Voltage regulation Figure 1. Internal schematic diagram Description The

 5.3. stl15n3llh5.pdf Size:849K _st

STL150N3LLH6
STL150N3LLH6

STL15N3LLH5 N-channel 30 V, 0.0045 ?, 15 A, PowerFLAT (3.3 x 3.3) STripFET V Power MOSFET Features RDS(on) Type VDSS ID max STL15N3LLH5 30 V < 0.0054 ? 15 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge PowerFLAT(3.3x3.3) High avalanche ruggedness (Chip scale package) Low

5.4. stl15dn4f5.pdf Size:775K _st

STL150N3LLH6
STL150N3LLH6

STL15DN4F5 Dual N-channel 40 V, 8 m?, 15 A PowerFLAT(5x6) double island, STripFET V Power MOSFET Features RDS(on) Type VDSS ID max. STL15DN4F5 40 V 9 m? 15 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge PowerFLAT (5x6) Low gate drive power losses Double island Application

Otros transistores... STL100N1VH5 , STL100N6LF6 , STL10N3LLH5 , STL11N3LLH6 , STL12N65M5 , STL13NM60N , STL140N4LLF5 , STL150N3LLH5 , IRF1010E , STL15DN4F5 , STL15N3LLH5 , STL160N3LLH6 , STL16N1VH5 , STL16N65M5 , STL17N3LLH6 , STL18N55M5 , STL18NM60N .

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