STL150N3LLH6 Specs and Replacement

Type Designator: STL150N3LLH6

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 4 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 30 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 33 A

Tj ⓘ - Maximum Junction Temperature: 150 °C

Electrical Characteristics

tr ⓘ - Rise Time: 18 nS

Cossⓘ - Output Capacitance: 740 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0024 Ohm

Package: POWERFLAT5X6

STL150N3LLH6 substitution

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STL150N3LLH6 datasheet

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STL150N3LLH6

STL150N3LLH6 N-channel 30 V, 0.0016 , 33 A PowerFLAT (6x5) STripFET VI DeepGATE Power MOSFET Features RDS(on) Type VDSS ID max STL150N3LLH6 30 V 0.0024 33 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark PowerFLAT ( 6x5 ) Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses V... See More ⇒

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 stl150n3llh6.pdf pdf_icon

STL150N3LLH6

STL150N3LLH6 N-channel 30 V, 0.0016 , 33 A PowerFLAT (6x5) STripFET VI DeepGATE Power MOSFET Features RDS(on) Type VDSS ID max STL150N3LLH6 30 V 0.0024 33 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark PowerFLAT ( 6x5 ) Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses V... See More ⇒

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STL150N3LLH6

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 stl15dn4f5.pdf pdf_icon

STL150N3LLH6

STL15DN4F5 Dual N-channel 40 V, 8 m , 15 A PowerFLAT (5x6) double island, STripFET V Power MOSFET Features RDS(on) Type VDSS ID max. STL15DN4F5 40 V 9 m 15 A (1) 1. The value is rated according Rthj-pcb RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) Very low switching gate charge PowerFLAT (5x6) Low gate drive power losses Double ... See More ⇒

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Detailed specifications: STL100N1VH5, STL100N6LF6, STL10N3LLH5, STL11N3LLH6, STL12N65M5, STL13NM60N, STL140N4LLF5, STL150N3LLH5, AO4407, STL15DN4F5, STL15N3LLH5, STL160N3LLH6, STL16N1VH5, STL16N65M5, STL17N3LLH6, STL18N55M5, STL18NM60N

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