APT20M22JVFR Todos los transistores

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 apt20m22jvfr.pdf

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 apt20m22jvr.pdf

APT20M22JVR 200V 97A 0.022 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche

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 apt20m22lvfr.pdf

APT20M22LVFR 200V 100A 0.022 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche T

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 apt20m22.pdf

APT20M22JVR 200V 97A 0.022 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. "UL Recognized" ISOTOP Faster Switching 100% Avalanche

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 apt20m22b2vfr.pdf

APT20M22B2VFR 200V 100A 0.022 POWER MOS V FREDFET T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanch

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 apt20m22b2vr.pdf

APT20M22B2VR 200V 100A 0.022 POWER MOS V T-MAX Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D L

 6.5. Size:64K  apt
 apt20m22lvr.pdf

APT20M22LVR 200V 100A 0.022 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-264 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Low

 6.6. Size:254K  inchange semiconductor
 apt20m22lvfr.pdf

isc N-Channel MOSFET Transistor APT20M22LVFR FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R =0.022 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general

 6.7. Size:254K  inchange semiconductor
 apt20m22lvr.pdf

isc N-Channel MOSFET Transistor APT20M22LVR FEATURES Drain Current I = 100A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R =0.022 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p