Справочник MOSFET. APT20M22JVFR

 

APT20M22JVFR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT20M22JVFR
   Тип транзистора: MOSFET
   Полярность: N
   Максимальная рассеиваемая мощность (Pd): 450 W
   Предельно допустимое напряжение сток-исток |Uds|: 200 V
   Предельно допустимое напряжение затвор-исток |Ugs|: 30 V
   Максимально допустимый постоянный ток стока |Id|: 97 A
   Максимальная температура канала (Tj): 150 °C
   Общий заряд затвора (Qg): 290 nC
   Время нарастания (tr): 25 ns
   Выходная емкость (Cd): 1950 pf
   Сопротивление сток-исток открытого транзистора (Rds): 0.022 Ohm
   Тип корпуса: SOT227

 Аналог (замена) для APT20M22JVFR

 

 

APT20M22JVFR Datasheet (PDF)

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apt20m22jvfr.pdf

APT20M22JVFR
APT20M22JVFR

APT20M22JVFR200V 97A 0.022POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Fast Recovery Body Diode

 4.1. Size:71K  apt
apt20m22jvr.pdf

APT20M22JVFR
APT20M22JVFR

APT20M22JVR200V 97A 0.022POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

 6.1. Size:66K  apt
apt20m22lvfr.pdf

APT20M22JVFR
APT20M22JVFR

APT20M22LVFR200V 100A 0.022POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche T

 6.2. Size:71K  apt
apt20m22.pdf

APT20M22JVFR
APT20M22JVFR

APT20M22JVR200V 97A 0.022POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout."UL Recognized"ISOTOP Faster Switching 100% Avalanche

 6.3. Size:64K  apt
apt20m22b2vfr.pdf

APT20M22JVFR
APT20M22JVFR

APT20M22B2VFR200V 100A 0.022POWER MOS V FREDFETT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanch

 6.4. Size:63K  apt
apt20m22b2vr.pdf

APT20M22JVFR
APT20M22JVFR

APT20M22B2VR200V 100A 0.022POWER MOS VT-MAXPower MOS V is a new generation of high voltage N-Channel enhancementmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D L

 6.5. Size:64K  apt
apt20m22lvr.pdf

APT20M22JVFR
APT20M22JVFR

APT20M22LVR200V 100A 0.022POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancementTO-264mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.. Faster Switching 100% Avalanche Tested D Low

 6.6. Size:254K  inchange semiconductor
apt20m22lvfr.pdf

APT20M22JVFR
APT20M22JVFR

isc N-Channel MOSFET Transistor APT20M22LVFRFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.022(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and general

 6.7. Size:254K  inchange semiconductor
apt20m22lvr.pdf

APT20M22JVFR
APT20M22JVFR

isc N-Channel MOSFET Transistor APT20M22LVRFEATURESDrain Current I = 100A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.022(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalp

Другие MOSFET... APT12080JVR , APT12080LVR , APT20M11JVFR , APT20M11JVR , APT20M13PVR , APT20M19JVR , APT20M22B2VFR , APT20M22B2VR , TK8A50D , APT20M22JVR , APT20M22LVFR , APT20M22LVR , APT20M26WVR , APT20M38BVFR , APT20M38BVR , APT20M38SVR , APT20M40BVR .

 

 
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