STP11NM50N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STP11NM50N
Código: 11NM50N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Máxima disipación de potencia (Pd): 70 W
Voltaje máximo drenador - fuente |Vds|: 500 V
Voltaje máximo fuente - puerta |Vgs|: 25 V
Corriente continua de drenaje |Id|: 9 A
Temperatura máxima de unión (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Tensión umbral entre puerta y fuente |Vgs(th)|: 4 V
Carga de la puerta (Qg): 19 nC
Tiempo de subida (tr): 10 nS
Conductancia de drenaje-sustrato (Cd): 42 pF
Resistencia entre drenaje y fuente RDS(on): 0.47 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET STP11NM50N
STP11NM50N Datasheet (PDF)
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stp11nm60fd.pdf
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stb11nm60fd stb11nm60fd-1 stp11nm60fd stp11nm60fdfp.pdf
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stb11nm60n-1 std11nm60n-1 std11nm60n stf11nm60n stf11nm60n stp11nm60n.pdf
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INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP11NM60FEATURESTypical R (on)=0.4DSLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI
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