Справочник MOSFET. STP11NM50N

 

STP11NM50N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: STP11NM50N
   Маркировка: 11NM50N
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 70 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 500 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 25 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 19 nC
   trⓘ - Время нарастания: 10 ns
   Cossⓘ - Выходная емкость: 42 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.47 Ohm
   Тип корпуса: TO220

 Аналог (замена) для STP11NM50N

 

 

STP11NM50N Datasheet (PDF)

 ..1. Size:678K  st
std11nm50n stf11nm50n stp11nm50n.pdf

STP11NM50N
STP11NM50N

STD11NM50NSTF11NM50N, STP11NM50NN-channel 500 V, 0.4 , 9 A MDmesh II Power MOSFETin DPAK, TO-220FP and TO-220FeaturesRDS(on) Type VDSS @TJmax ID3max13STD11NM50N2DPAK1STF11NM50N 550 V

 7.1. Size:943K  st
stb11nm80 stf11nm80 stw11nm80 stp11nm80.pdf

STP11NM50N
STP11NM50N

STB11NM80, STF11NM80STP11NM80, STW11NM80N-channel 800 V, 0.35 , 11 A MDmesh Power MOSFETTO-220, TO-220FP, D2PAK, TO-247FeaturesRDS(on) Type VDSS RDS(on)*Qg IDmax313STB11NM802DPAK1STF11NM80TO-247800 V

 7.2. Size:624K  st
stb11nm60t4 stp11nm60.pdf

STP11NM50N
STP11NM50N

STB11NM60T4, STP11NM60DatasheetN-channel 600 V, 0.4 typ., 11 A, MDmesh II Power MOSFETs in DPAK and TO-220 packagesFeaturesVDSSTABRDS(on) max. IDTAB Order codes Package(@ TJmax)STB11NM60T4 DPAK3650 V 0.45 11 A132 STP11NM60 TO-220D PAK TO-220 21 100% avalanche tested Low input capacitance and gate charge Low gate input resistanceD(2

 7.3. Size:388K  st
stp11nm60a stp11nm60afp stb11nm60a-1.pdf

STP11NM50N
STP11NM50N

STP11NM60ASTP11NM60AFP - STB11NM60A-1N-CHANNEL 600V - 0.4 - 11A TO-220/TO-220FP/I2PAKMDmeshPower MOSFETTYPE VDSS RDS(on) IDSTP11NM60A 600 V

 7.4. Size:1258K  st
std11nm65n stf11nm65n stf11nm65n stp11nm65n.pdf

STP11NM50N
STP11NM50N

STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65NN-channel 650 V, 0.425 typ., 11 A MDmeshII Power MOSFET in DPAK, TO-220FP, IPAKFP and TO-220 packagesDatasheet - production dataFeaturesTABVDSS @ RDS(on) 3Order codes ID1 TJmax max3DPAK 21STD11NM65NSTF11NM65NTO-220FP710 V

 7.5. Size:486K  st
stb11nm60fd-1 stb11nm60fdt4 stp11nm60fdfp.pdf

STP11NM50N
STP11NM50N

STB11NM60FD - STB11NM60FD-1STP11NM60FD - STP11NM60FDFPN-channel 600V - 0.40 - 11A - TO-220/TO-220FP/D2PAK/I2PAKFDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID32 3STB11NM60FD 600V

 7.6. Size:349K  st
stp11nm60fd.pdf

STP11NM50N
STP11NM50N

STP11NM60FDSTP11NM60FDFP - STB11NM60FD-1N-CHANNEL 600V - 0.40 - 11A TO-220 / TO-220FP/I2PAKFDmeshPower MOSFET (with FAST DIODE)TYPE VDSS RDS(on) IDSTP11NM60FD 600 V

 7.7. Size:493K  st
stb11nm60fd stb11nm60fd-1 stp11nm60fd stp11nm60fdfp.pdf

STP11NM50N
STP11NM50N

STB11NM60FD - STB11NM60FD-1STP11NM60FD - STP11NM60FDFPN-channel 600V - 0.40 - 11A - TO-220/TO-220FP/D2PAK/I2PAKFDmesh Power MOSFET (with fast diode)General featuresType VDSS RDS(on) ID32 3STB11NM60FD 600V

 7.8. Size:632K  st
stb11nm60n-1 std11nm60n-1 std11nm60n stf11nm60n stf11nm60n stp11nm60n.pdf

STP11NM50N
STP11NM50N

STx11NM60NN-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) 3Type ID 323(@TJmax) max12 11STB11NM60N-1 650 V 0.45 10 ADPAKTO-220IPAKSTB11NM60N 650 V 0.45 10 ASTD11NM60N 650 V 0.45 10 ASTD11NM60N-1 650 V 0.45 10 ASTF11NM60N 650 V 0.45 10 A(1)STP11NM60N 650 V 0.45

 7.9. Size:632K  st
stp11nm60n stb11nm60n std11nm60n stf11nm60n.pdf

STP11NM50N
STP11NM50N

STx11NM60NN-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) 3Type ID 323(@TJmax) max12 11STB11NM60N-1 650 V 0.45 10 ADPAKTO-220IPAKSTB11NM60N 650 V 0.45 10 ASTD11NM60N 650 V 0.45 10 ASTD11NM60N-1 650 V 0.45 10 ASTF11NM60N 650 V 0.45 10 A(1)STP11NM60N 650 V 0.45

 7.10. Size:1258K  st
std11nm65n stf11nm65n stfi11nm65n stp11nm65n.pdf

STP11NM50N
STP11NM50N

STD11NM65N, STF11NM65N, STFI11NM65N, STP11NM65NN-channel 650 V, 0.425 typ., 11 A MDmeshII Power MOSFET in DPAK, TO-220FP, IPAKFP and TO-220 packagesDatasheet - production dataFeaturesTABVDSS @ RDS(on) 3Order codes ID1 TJmax max3DPAK 21STD11NM65NSTF11NM65NTO-220FP710 V

 7.11. Size:249K  st
stp11nm60a.pdf

STP11NM50N
STP11NM50N

STP11NM60ASTP11NM60AFP - STB11NM60A-1N-CHANNEL 600V - 0.4 - 11A TO-220/TO-220FP/I2PAKMDmeshPower MOSFETTYPE VDSS RDS(on) IDSTP11NM60A 600 V

 7.12. Size:635K  st
stp11nm60n stf11nm60n std11nm60n stb11nm60n.pdf

STP11NM50N
STP11NM50N

STx11NM60NN-channel 600 V, 0.37 , 10 A MDmesh II Power MOSFETTO-220, TO-220FP, I2PAK, IPAK, DPAK, D2PAKFeaturesVDSS RDS(on) 3Type ID 323(@TJmax) max12 11STB11NM60N-1 650 V 0.45 10 ADPAKTO-220IPAKSTB11NM60N 650 V 0.45 10 ASTD11NM60N 650 V 0.45 10 ASTD11NM60N-1 650 V 0.45 10 ASTF11NM60N 650 V 0.45 10 A(1)STP11NM60N 650 V 0.45

 7.13. Size:904K  st
stb11nm80 stf11nm80 sti11nm80 stp11nm80 stw11nm80.pdf

STP11NM50N
STP11NM50N

STB11NM80, STF11NM80STI11NM80, STP11NM80, STW11NM80N-channel 800 V, 0.35 , 11 A MDmesh Power MOSFETin DPAK, TO-220FP, IPAK, TO-220, TO-247FeaturesRDS(on) Order codes VDSS RDS(on)*Qg IDmax3312STB11NM801DPAKTO-220FPSTF11NM80STI11NM80 800 V

 7.14. Size:360K  st
stb11nm60-1 stb11nm60t4 stp11nm60fp.pdf

STP11NM50N
STP11NM50N

STP11NM60 - STP11NM60FPSTB11NM60 - STB11NM60-1N-channel 650V @ TJmax - 0.4 - 11A TO-220/FP/D2PAK/I2PAKMDmesh Power MOSFETGeneral featuresVDSSType RDS(on) ID(@TJ=TJmax)332211STP11NM60 650V

 7.15. Size:750K  st
std11nm60nd stf11nm60nd sti11nm60nd stp11nm60nd stu11nm60nd.pdf

STP11NM50N
STP11NM50N

STD11NM60ND, STF/I11NM60NDSTP11NM60ND, STU11NM60NDN-channel 600 V, 0.37 , 10 A, FDmesh II Power MOSFETI2PAK, TO-220, TO-220FP, IPAK, DPAKFeatures Order codes VDSS (@Tjmax) RDS(on) max ID33STD11NM60ND 10 A 1 21STF11NM60ND 10 A(1)DPAKIPAKSTI11NM60ND 650 V

 7.16. Size:367K  st
stp11nm60 stp11nm60fp stb11nm60 stb11nm60-1.pdf

STP11NM50N
STP11NM50N

STP11NM60 - STP11NM60FPSTB11NM60 - STB11NM60-1N-channel 650V @ TJmax - 0.4 - 11A TO-220/FP/D2PAK/I2PAKMDmesh Power MOSFETGeneral featuresVDSSType RDS(on) ID(@TJ=TJmax)332211STP11NM60 650V

 7.17. Size:381K  st
stp11nm80.pdf

STP11NM50N
STP11NM50N

STP11NM80 - STB11NM80STF11NM80 - STW11NM80N-CHANNEL 800V - 0.35 - 11A TO-220/FP/D2PAK/TO-247MDmeshPower MOSFETTARGET DATATYPE VDSS RDS(on) Rds(on)*Qg IDSTP11NM80 800 V

 7.18. Size:539K  st
stb11nm65n stf11nm65n stp11nm65n stw11nm65n.pdf

STP11NM50N
STP11NM50N

STB11NM65N - STF11NM65NSTI11NM65N-STP11NM65N-STW11NM65NN-channel 650V - 0.33 - 12A - TO-220/FP- D2/I2PAK - TO-247Second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID(@TJmax) Max32312STI11NM65N 710 V

 7.19. Size:205K  inchange semiconductor
stp11nm60.pdf

STP11NM50N
STP11NM50N

INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP11NM60FEATURESTypical R (on)=0.4DSLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNI

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