STP13NM60N MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: STP13NM60N
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 90 W|Vds|ⓘ - Voltaje máximo drenador - fuente: 600 V
|Vgs|ⓘ - Voltaje máximo fuente - puerta: 25 V
|Id|ⓘ - Corriente continua de drenaje: 11 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 8 nS
Cossⓘ - Capacitancia de salida: 60 pF
Rds(on)ⓘ - Resistencia estado encendido drenaje a fuente: 0.36 Ohm
Paquete / Cubierta: TO220
Búsqueda de reemplazo de MOSFET STP13NM60N
STP13NM60N Datasheet (PDF)
stb13nm60n std13nm60n stf13nm60n stp13nm60n stw13nm60n.pdf
STB13NM60N,STD13NM60N,STF13NM60NSTP13NM60N,STW13NM60NN-channel 600 V, 0.28 , 11 A MDmesh II Power MOSFETin D2PAK, DPAK, TO-220FP, TO-220, TO-247FeaturesVDSS RDS(on) Type ID(@Tjmax) max3322STB13NM60N 650 V
stf13nm60n sti13nm60n stp13nm60n stu13nm60n stw13nm60n.pdf
STF13NM60N, STI13NM60N, STP13NM60N,STU13NM60N, STW13NM60NN-channel 600 V, 0.28 typ., 11 A MDmesh II Power MOSFET in TO-220FP, IPAK, TO-220, IPAK, TO-247 packagesDatasheet production dataFeaturesTABVDSS RDS(on) Order codes ID(@Tjmax) max3322 1STF13NM60N 1IPAKTO-220FPSTI13NM60NSTP13NM60N 650 V
stp13nm60n.pdf
INCHANGE SemiconductorIsc N-Channel MOSFET Transistor STP13NM60NFEATURESTypical R (on)=0.28DSLow gate input resistance100% avalanche testedLow input capacitance and gate chargeMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE
std13nm60nd stf13nm60nd stp13nm60nd.pdf
STD13NM60ND, STF13NM60ND, STP13NM60NDN-channel 600 V, 0.32 typ., 11 A, FDmesh II Power MOSFET (with fast diode) in DPAK, TO-220FP and TO-220 packagesDatasheet - production dataFeaturesTABOrder codes VDS @ TJmax RDS(on) max ID313STD13NM60ND21DPAKSTF13NM60ND 650 V 0.38 11 ATO-220FPSTP13NM60NDTAB The worldwide best RDS(on)* area among fast recove
stp13nm60nd.pdf
INCHANGE Semiconductorisc N-Channel Mosfet Transistor STP13NM60NDFEATURESDrain Current I = 11A@ T =25D CDrain Source Voltage-: V =600V(Min)DSSFast Switching Speed100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARA
stb13nm50n-1 stb13nm50n stf13nm50n stp13nm50n stw13nm50n.pdf
STB13NM50N/-1 - STF13NM50NSTP13NM50N - STW13NM50NN-channel 500 V - 0.250 - 12 A MDmesh II Power MOSFETTO-220 - TO-247 - TO-220FP - I2PAK - D2PAKFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB13NM50N 550 V 0.32 12 ATO-220 IPAKSTB13NM50N-1 550 V 0.32 12 ASTF13NM50N 550 V 0.32 12 A(1) 321STP13NM50N 550 V 0.32 12 ATO-247STW13N
stb13nm50n stf13nm50n stp13nm50n stw13nm50n.pdf
STB13NM50N/-1 - STF13NM50NSTP13NM50N - STW13NM50NN-channel 500 V - 0.250 - 12 A MDmesh II Power MOSFETTO-220 - TO-247 - TO-220FP - I2PAK - D2PAKFeaturesVDSS RDS(on) Type ID(@Tjmax) max332211STB13NM50N 550 V 0.32 12 ATO-220 IPAKSTB13NM50N-1 550 V 0.32 12 ASTF13NM50N 550 V 0.32 12 A(1) 321STP13NM50N 550 V 0.32 12 ATO-247STW13N
Otros transistores... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , 4N60 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
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