APT20M38BVFR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: APT20M38BVFR
Tipo de FET: MOSFET
Polaridad de transistor: N
ESPECIFICACIONES MÁXIMAS
Pdⓘ - Máxima disipación de potencia: 370 W
|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V
|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V
|Id|ⓘ - Corriente continua de drenaje: 67 A
Tjⓘ - Temperatura máxima de unión: 150 °C
CARACTERÍSTICAS ELÉCTRICAS
trⓘ - Tiempo de subida: 21 nS
Cossⓘ - Capacitancia de salida: 1145 pF
RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.038 Ohm
Encapsulados: TO247
Búsqueda de reemplazo de APT20M38BVFR MOSFET
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APT20M38BVFR datasheet
apt20m38bvfr.pdf
APT20M38BVFR 200V 67A 0.038 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes
apt20m38bvr.pdf
APT20M38BVR 200V 67A 0.038 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower
apt20m38bvr.pdf
isc N-Channel MOSFET Transistor APT20M38BVR FEATURES Drain Current I =67A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R =0.038 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur
apt20m38svfrg.pdf
200V 67A 0.038 APT20M38BVFR APT20M38SVFR APT20M38BVFRG* APT20M38SVFRG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. BVFR POWER MOS V FREDFET D3PAK Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power
Otros transistores... APT20M19JVR, APT20M22B2VFR, APT20M22B2VR, APT20M22JVFR, APT20M22JVR, APT20M22LVFR, APT20M22LVR, APT20M26WVR, 60N06, APT20M38BVR, APT20M38SVR, APT20M40BVR, APT20M42HVR, APT20M45BVFR, APT20M45BVR, APT20M45SVFR, APT20M45SVR
History: IRFS9541
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