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APT20M38BVFR MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: APT20M38BVFR
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 370 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 67 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 21 ns
   Cossⓘ - Выходная емкость: 1145 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.038 Ohm
   Тип корпуса: TO247

 Аналог (замена) для APT20M38BVFR

 

 

APT20M38BVFR Datasheet (PDF)

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 apt20m38bvfr.pdf

APT20M38BVFR APT20M38BVFR

APT20M38BVFR200V 67A 0.038POWER MOS V FREDFETPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 4.1. Size:73K  apt
 apt20m38bvr.pdf

APT20M38BVFR APT20M38BVFR

APT20M38BVR200V 67A 0.038POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement TO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 4.2. Size:376K  inchange semiconductor
 apt20m38bvr.pdf

APT20M38BVFR APT20M38BVFR

isc N-Channel MOSFET Transistor APT20M38BVRFEATURESDrain Current I =67A@ T =25D CDrain Source Voltage-: V =200V(Min)DSSStatic Drain-Source On-Resistance: R =0.038(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONDesigned for use in switch mode power supplies and generalpur

 6.1. Size:155K  apt
 apt20m38svfrg.pdf

APT20M38BVFR APT20M38BVFR

200V 67A 0.038APT20M38BVFR APT20M38SVFRAPT20M38BVFRG* APT20M38SVFRG**G Denotes RoHS Compliant, Pb Free Terminal Finish.BVFRPOWER MOS V FREDFETD3PAKPower MOS V is a new generation of high voltage N-Channel enhancementTO-247mode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power

 6.2. Size:76K  apt
 apt20m38svr.pdf

APT20M38BVFR APT20M38BVFR

APT20M38SVR200V 67A 0.038POWER MOS VPower MOS V is a new generation of high voltage N-Channel enhancement D3PAKmode power MOSFETs. This new technology minimizes the JFET effect,increases packing density and reduces the on-resistance. Power MOS Valso achieves faster switching speeds through optimized gate layout.D Faster Switching 100% Avalanche Tested Lower

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