STP200N4F3 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

STP200N4F3STB200N4F3N-channel 40 V, 0.0025 , 120 A, D2PAK, TO-220planar STripFET Power MOSFETFeaturesType VDSS RDS(on) max ID PwSTB200N4F3 40 V

STP200N3LL N-channel 30 V, 2.15 m typ., 120 A Power MOSFET in a TO-220 package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STP200N3LL 30 V 2.4 m 120 A 176.5 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Figure 1: Interna

STP200NF04STB200NF04 - STB200NF04-1N-CHANNEL 40V - 120 A - 3.3 m TO-220/DPAK/IPAKSTripFETII MOSFETTable 1: General Features Figure 1: PackageType VDSS RDS(on) ID PwSTB200NF04 40 V

STB200N6F3, STI200N6F3STP200N6F3N-channel 60 V, 3 m, 120 A D2PAK, TO-220, I2PAKSTripFET Power MOSFETFeaturesType VDSS RDS(on) ID PwSTB200N6F3 60 V

STP200NF04LSTB200NF04L - STB200NF04L-1N-CHANNEL 40V - 3 m - 120 A TO-220/DPAK/IPAKSTripFET II MOSFETTable 1: General Features Figure 1: PackageTYPE VDSS RDS(on) IDSTB200NF04L 40 V 3.5 m 120 ASTP200NF04L 40 V 3.8 m 120 ASTB200NF04L-1 40 V 3.8 m 120 A TYPICAL RDS(on) = 3m 33211 100% AVALANCHE TESTEDTO-220DPAK LOW THERESHOLD DRIVEDESCRIPT

STP200NF03STB200NF03 STB200NF03-1N-CHANNEL 30V - 0.0032 - 120A DPAK/IPAK/TO-220STripFET II POWER MOSFETAUTOMOTIVE SPECIFICTYPE VDSS RDS(on) IDSTB200NF03/-1 30 V

STP200NF03STB200NF03 - STB200NF03-1N-channel 30V - 0.0032 - 120A - D2PAK/I2PAK/TO-220STripFET III Power MOSFETGeneral featuresType VDSS RDS(on) IDSTP200NF03 30V