STP200N4F3 MOSFET Datasheet: N-Ch, 40V, 120A. Full specification with pinout and replacement list

STP200N4F3 Specs and Replacement

Type Designator: STP200N4F3

Type of Transistor: MOSFET

Type of Control Channel: N-Channel

Absolute Maximum Ratings

Pd ⓘ - Maximum Power Dissipation: 300 W

|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V

|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V

|Id| ⓘ - Maximum Drain Current: 120 A

Tj ⓘ - Maximum Junction Temperature: 175 °C

Electrical Characteristics

tr ⓘ - Rise Time: 180 nS

Cossⓘ - Output Capacitance: 1270 pF

RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm

Package: TO220

STP200N4F3 substitution

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STP200N4F3 datasheet

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STB200N6F3, STI200N6F3 STP200N6F3 N-channel 60 V, 3 m , 120 A D2PAK, TO-220, I2PAK STripFET Power MOSFET Features Type VDSS RDS(on) ID Pw STB200N6F3 60 V ... See More ⇒