STP200N4F3 Datasheet and Replacement
Type Designator: STP200N4F3
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 300 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 40 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 20 V
|Id| ⓘ - Maximum Drain Current: 120 A
Tj ⓘ - Maximum Junction Temperature: 175 °C
tr ⓘ - Rise Time: 180 nS
Cossⓘ - Output Capacitance: 1270 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.0035 Ohm
Package: TO220
STP200N4F3 substitution
STP200N4F3 Datasheet (PDF)
stb200n4f3 stp200n4f3.pdf

STP200N4F3STB200N4F3N-channel 40 V, 0.0025 , 120 A, D2PAK, TO-220planar STripFET Power MOSFETFeaturesType VDSS RDS(on) max ID PwSTB200N4F3 40 V
stp200n3ll.pdf

STP200N3LL N-channel 30 V, 2.15 m typ., 120 A Power MOSFET in a TO-220 package Datasheet - production data Features R DS(on)Order code V I P DS D TOTmax. STP200N3LL 30 V 2.4 m 120 A 176.5 W Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss Applications Switching applications Figure 1: Interna
stp200nf04 stb200nf04 stb200nf04-1.pdf

STP200NF04STB200NF04 - STB200NF04-1N-CHANNEL 40V - 120 A - 3.3 m TO-220/DPAK/IPAKSTripFETII MOSFETTable 1: General Features Figure 1: PackageType VDSS RDS(on) ID PwSTB200NF04 40 V
stb200n6f3 sti200n6f3 stp200n6f3.pdf

STB200N6F3, STI200N6F3STP200N6F3N-channel 60 V, 3 m, 120 A D2PAK, TO-220, I2PAKSTripFET Power MOSFETFeaturesType VDSS RDS(on) ID PwSTB200N6F3 60 V
Datasheet: STP180NS04ZC , STP185N55F3 , STP18N55M5 , STP18NM60N , STP18NM80 , STP190N55LF3 , STP19NF20 , STP19NM50N , MMIS60R580P , STP200N6F3 , STP200NF03 , STP200NF04 , STP200NF04L , STP20N95K5 , STP20NF06 , STP20NF06L , STP20NF20 .
History: NCE20NP1006S | 2SK1850 | NCE2301C | AONT32136C | RF6E045AJ | KTK5131E | AO6401-HF
Keywords - STP200N4F3 MOSFET datasheet
STP200N4F3 cross reference
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History: NCE20NP1006S | 2SK1850 | NCE2301C | AONT32136C | RF6E045AJ | KTK5131E | AO6401-HF



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