STP21N90K5 Todos los transistores

 

STP21N90K5 MOSFET. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: STP21N90K5

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pd): 210 W

Tensión drenaje-fuente (Vds): 900 V

Tensión compuerta-fuente (Vgs): 30 V

Corriente continua de drenaje (Id): 17 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Tensión umbral compuerta-fuente Vgs(th): 5 V

Carga de compuerta (Qg): 43 nC

Resistencia drenaje-fuente RDS(on): 0.299 Ohm

Empaquetado / Estuche: TO220

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STP21N90K5 Datasheet (PDF)

4.1. stp21nm60n.pdf Size:564K _upd-mosfet

STP21N90K5
STP21N90K5

STP21NM60N-F21NM60N-STW21NM60N STB21NM60N-STB21NM60N-1 N-channel 600 V - 0.17 Ω - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh™ Power MOSFET Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 3 2 1 2 1 STB21NM60N 650 V < 0.22 Ω 17 A 1 D2PAK TO-220 STB21NM60N-1 650 V < 0.22 Ω 17 A TO-220FP STF21NM60N 650 V < 0.22 Ω 17 A(1) STP21NM60N 650 V

4.2. stp21nm50n.pdf Size:454K _upd-mosfet

STP21N90K5
STP21N90K5

STP/F21NM50N - STW21NM50N STB21NM50N - STB21NM50N-1 N-channel 500V - 0.15Ω - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh™ Power MOSFET General features VDSS Type RDS(on) ID 3 (@Tjmax) 3 1 3 2 2 1 1 STB21NM50N 550V < 0.19Ω 18A D2PAK TO-220 TO-220FP STB21NM50N-1 550V < 0.19Ω 18A STF21NM50N 550V < 0.19Ω 18A(1) STP21NM50N 550V < 0.19Ω 18A STW21NM50N 550V

 4.3. stp21n06.pdf Size:197K _st

STP21N90K5
STP21N90K5

STP21N06L STP21N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STP21N06L 60 V < 0.085 ? 21 A STP21N06LFI 60 V < 0.085 ? 14 A TYPICAL RDS(on) = 0.065 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 1 1 LOGIC LEVEL COMPATIBLE INPUT o 175 C OPERATING TEMPERATURE APP

4.4. stp21nm60n stf21nm60n stb21nm60n stb21nm60n-1 stw21nm60n.pdf Size:561K _st

STP21N90K5
STP21N90K5

STP21NM60N-F21NM60N-STW21NM60N STB21NM60N-STB21NM60N-1 N-channel 600 V - 0.17 ? - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh Power MOSFET Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 3 2 1 2 1 STB21NM60N 650 V < 0.22 ? 17 A 1 D2PAK TO-220 STB21NM60N-1 650 V < 0.22 ? 17 A TO-220FP STF21NM60N 650 V < 0.22 ? 17 A(1) STP21NM60N 650 V < 0.22 ? 17 A

 4.5. stp21nm50n stf21nm50n stb21nm50n stb21nm50n-1 stw21nm50n.pdf Size:461K _st

STP21N90K5
STP21N90K5

STP/F21NM50N - STW21NM50N STB21NM50N - STB21NM50N-1 N-channel 500V - 0.15? - 18A TO-220/FP/D2/I2PAK/TO-247 Second generation MDmesh Power MOSFET General features VDSS Type RDS(on) ID 3 (@Tjmax) 3 1 3 2 2 1 1 STB21NM50N 550V < 0.19? 18A D2PAK TO-220 TO-220FP STB21NM50N-1 550V < 0.19? 18A STF21NM50N 550V < 0.19? 18A(1) STP21NM50N 550V < 0.19? 18A STW21NM50N 550V < 0.19? 18A 1

4.6. stp21n05.pdf Size:197K _st

STP21N90K5
STP21N90K5

STP21N05L STP21N05LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STP21N05L 50 V < 0.085 ? 21 A STP21N05LFI 50 V < 0.085 ? 14 A TYPICAL RDS(on) = 0.065 ? AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 1 1 LOGIC LEVEL COMPATIBLE INPUT o 175 C OPERATING TEMPERATURE APP

4.7. stb21n65m5 stf21n65m5 sti21n65m5 stp21n65m5 stw21n65m5.pdf Size:1270K _st

STP21N90K5
STP21N90K5

STB21N65M5, STF21N65M5 STI21N65M5, STP21N65M5, STW21N65M5 N-channel 650 V, 0.175 ?, 17 A MDmesh V Power MOSFET D2PAK, TO-220FP, TO-220, I2PAK, TO-247 Features VDSS @ RDS(on) Type ID PW TJmax max 3 2 3 1 STB21N65M5 17 A 125 W 2 1 TO-220 STF21N65M5 17 A(1) 30 W I?PAK STI21N65M5 710 V < 0.190 ? 125 W STP21N65M5 17 A 125 W STW21N65M5 125 W 3 2 3 3 1 1 2 1. Limited only by m

4.8. stp21n06l.pdf Size:383K _st

STP21N90K5
STP21N90K5

STP21N06L STP21N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP21N06L 60 V < 0.085 ? 21 A STP21N06LFI 60 V < 0.085 ? 14 A TYPICAL R = 0.065 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 1 1 LOGIC LEVEL COMPATIBLE INPUT 175 oC OPERATING TEMPERATURE APPLI

4.9. stp21n05l.pdf Size:383K _st

STP21N90K5
STP21N90K5

STP21N05L STP21N05LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP21N05L 50 V < 0.085 ? 21 A STP21N05LFI 50 V < 0.085 ? 14 A TYPICAL R = 0.065 ? DS(on) AVALANCHE RUGGED TECHNOLOGY 100% AVALANCHE TESTED REPETITIVE AVALANCHE DATA AT 100oC 3 3 LOW GATE CHARGE 2 2 1 1 LOGIC LEVEL COMPATIBLE INPUT 175 oC OPERATING TEMPERATURE APPLI

4.10. stp21nm60nd stf21nm60nd stb21nm60nd sti21nm60nd stw21nm60nd.pdf Size:553K _st

STP21N90K5
STP21N90K5

STP/F21NM60ND-STW21NM60ND STB21NM60ND-STI21NM60ND N-channel 600 V, 0.17 ?, 17 A FDmesh II Power MOSFET D2PAK, I2PAK, TO-220FP, TO-220, TO-247 Features VDSS @ RDS(on) Type ID TJmax max 3 3 1 3 2 2 1 STB21NM60ND 650 V < 0.22 ? 17 A 1 D2PAK TO-220 STI21NM60ND 650 V < 0.22 ? 17 A TO-220FP STF21NM60ND 650 V < 0.22 ? 17 A(1) STP21NM60ND 650 V < 0.22 ? 17 A STW21NM60ND 650 V < 0.22

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