STP21N90K5 Datasheet and Replacement
Type Designator: STP21N90K5
Type of Transistor: MOSFET
Type of Control Channel: N -Channel
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 112 pF
Rds ⓘ - Maximum Drain-Source On-State Resistance: 0.299 Ohm
Package: TO220
STP21N90K5 substitution
STP21N90K5 Datasheet (PDF)
stb21n90k5 stf21n90k5 stp21n90k5 stw21n90k5.pdf

STB21N90K5, STF21N90K5, STP21N90K5,STW21N90K5N-channel 900 V, 0.25 typ., 18.5 A Zener-protected SuperMESH 5Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packagesDatasheet production dataFeaturesTABOrder codes VDSS RDS(on)max ID PW331STB21N90K5 250 W 21D2PAKTO-220FPSTF21N90K5 40 W900 V
stp21n06.pdf

STP21N06LSTP21N06LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE V R IDSS DS(on) DSTP21N06L 60 V
stp21n06l.pdf

STP21N06LSTP21N06LFIN - CHANNEL ENHANCEMENT MODELOW THRESHOLD POWER MOS TRANSISTORTYPE VDSS RDS(on) IDSTP21N06L 60 V
stp21nm60n stf21nm60n stb21nm60n stb21nm60n-1 stw21nm60n.pdf

STP21NM60N-F21NM60N-STW21NM60NSTB21NM60N-STB21NM60N-1N-channel 600 V - 0.17 - 17 A TO-220 - TO-220FP - D2PAK -I2PAK - TO-247 second generation MDmesh Power MOSFETFeaturesVDSS RDS(on) Type ID(@Tjmax) max3332 121STB21NM60N 650 V
Datasheet: STP20NM50 , STP20NM50FD , STP20NM60 , STP20NM60FD , STP20NM60FP , STP20NM65N , STP210N75F6 , STP21N65M5 , IRFZ44N , STP21NM60ND , STP22NF03L , STP22NM60N , STP22NS25Z , STP23NM50N , STP23NM60ND , STP24NF10 , STP24NM60N .
Keywords - STP21N90K5 MOSFET datasheet
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