STP21N90K5 Datasheet. Specs and Replacement
Type Designator: STP21N90K5 📄📄
Type of Transistor: MOSFET
Type of Control Channel: N-Channel
Absolute Maximum Ratings
Pd ⓘ - Maximum Power Dissipation: 250 W
|Vds|ⓘ - Maximum Drain-Source Voltage: 900 V
|Vgs|ⓘ - Maximum Gate-Source Voltage: 30 V
|Id| ⓘ - Maximum Drain Current: 18.5 A
Tj ⓘ - Maximum Junction Temperature: 150 °C
Electrical Characteristics
tr ⓘ - Rise Time: 27 nS
Cossⓘ - Output Capacitance: 112 pF
RDSonⓘ - Maximum Drain-Source On-State Resistance: 0.299 Ohm
Package: TO220
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STP21N90K5 substitution
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STP21N90K5 datasheet
stb21n90k5 stf21n90k5 stp21n90k5 stw21n90k5.pdf
STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 N-channel 900 V, 0.25 typ., 18.5 A Zener-protected SuperMESH 5 Power MOSFET in a D2PAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data Features TAB Order codes VDSS RDS(on)max ID PW 3 3 1 STB21N90K5 250 W 2 1 D2PAK TO-220FP STF21N90K5 40 W 900 V ... See More ⇒
stp21n06.pdf
STP21N06L STP21N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE V R I DSS DS(on) D STP21N06L 60 V ... See More ⇒
stp21n06l.pdf
STP21N06L STP21N06LFI N - CHANNEL ENHANCEMENT MODE LOW THRESHOLD POWER MOS TRANSISTOR TYPE VDSS RDS(on) ID STP21N06L 60 V ... See More ⇒
stp21nm60n stf21nm60n stb21nm60n stb21nm60n-1 stw21nm60n.pdf
STP21NM60N-F21NM60N-STW21NM60N STB21NM60N-STB21NM60N-1 N-channel 600 V - 0.17 - 17 A TO-220 - TO-220FP - D2PAK - I2PAK - TO-247 second generation MDmesh Power MOSFET Features VDSS RDS(on) Type ID (@Tjmax) max 3 3 3 2 1 2 1 STB21NM60N 650 V ... See More ⇒
Detailed specifications: STP20NM50, STP20NM50FD, STP20NM60, STP20NM60FD, STP20NM60FP, STP20NM65N, STP210N75F6, STP21N65M5, IRF3205, STP21NM60ND, STP22NF03L, STP22NM60N, STP22NS25Z, STP23NM50N, STP23NM60ND, STP24NF10, STP24NM60N
Keywords - STP21N90K5 MOSFET specs
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