APT20M45BVFR MOSFET Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: APT20M45BVFR

Tipo de FET: MOSFET

Polaridad de transistor: N

ESPECIFICACIONES MÁXIMAS

Pdⓘ - Máxima disipación de potencia: 300 W

|Vds|ⓘ - Voltaje máximo drenador-fuente: 200 V

|Vgs|ⓘ - Voltaje máximo fuente-puerta: 30 V

|Id|ⓘ - Corriente continua de drenaje: 56 A

Tjⓘ - Temperatura máxima de unión: 150 °C

CARACTERÍSTICAS ELÉCTRICAS

trⓘ - Tiempo de subida: 14 nS

Cossⓘ - Capacitancia de salida: 980 pF

RDSonⓘ - Resistencia estado encendido drenaje a fuente: 0.045 Ohm

Encapsulados: TO247

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APT20M45BVFR datasheet

 ..1. Size:94K  apt
 apt20m45bvfr.pdf pdf_icon

APT20M45BVFR

APT20M45BVFR 200V 56A 0.045 POWER MOS V FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Fast Recovery Body Diode 100% Avalanche Tes

 ..2. Size:375K  inchange semiconductor
 apt20m45bvfr.pdf pdf_icon

APT20M45BVFR

isc N-Channel MOSFET Transistor APT20M45BVFR FEATURES Drain Current I = 56A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R =0.045 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general p

 4.1. Size:92K  apt
 apt20m45bvr.pdf pdf_icon

APT20M45BVFR

APT20M45BVR 200V 56A 0.045 POWER MOS V Power MOS V is a new generation of high voltage N-Channel enhancement TO-247 mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V also achieves faster switching speeds through optimized gate layout. Faster Switching 100% Avalanche Tested D Lower

 4.2. Size:375K  inchange semiconductor
 apt20m45bvr.pdf pdf_icon

APT20M45BVFR

isc N-Channel MOSFET Transistor APT20M45BVR FEATURES Drain Current I =56A@ T =25 D C Drain Source Voltage- V =200V(Min) DSS Static Drain-Source On-Resistance R =0.045 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Designed for use in switch mode power supplies and general pur

MOSTRAR MÁS

Otros transistores... APT20M22LVFR, APT20M22LVR, APT20M26WVR, APT20M38BVFR, APT20M38BVR, APT20M38SVR, APT20M40BVR, APT20M42HVR, IRF3205, APT20M45BVR, APT20M45SVFR, APT20M45SVR, APT30M19JVFR, APT30M19JVR, APT30M40JVFR, APT30M40JVR, APT30M40LVFR